The residual C concentration control for low temperature growth p-type GaN

doi:10.1088/1674-1056/26/10/107102

Abstract

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp₂Mg flow which will lead the growth rate and C concentration increase along the increase of Cp₂Mg flow; (iii) annealing outside of metal-organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.

Keywords: nitride materials p-GaN C concentration

Received: 05 June 2017
Revised: 04 July 2017
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	71.55.Eq	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)

Fund:

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037).

Corresponding Authors: De-Gang Zhao, Jing Yang
E-mail: dgzhao@red.semi.ac.cn;yangjing333@semi.ac.cn

Cite this article:

Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群) The residual C concentration control for low temperature growth p-type GaN 2017 Chin. Phys. B 26 107102

[1]	Cao K W, Fu B L, Liu Z, Zhao L X, Li J M and Wang J X 2016 J. Semicond. 37 014008
[2]	Jiang L R, Liu J P, Tian A Q, Cheng Y, Li Z C, Zhang L Q, Zhang S M, Li D Y, Ikeda M and Yang H 2016 J. Semicond. 37 111001
[3]	Li J M, Liu Z, Liu Z Q, Yan J Q, Wei T B, Yi X Y and Wang J X 2016 J. Semicond. 37 061001
[4]	Lei Y, Liu Z Q, He M, Yi X Y, Wang J X, Li J M, Zheng S W and Li S T 2015 J. Semicond. 36 054006
[5]	Sun Q, Yan W, Feng M X, Li Z C, Feng B, Zhao H M and Yang H 2016 J. Semicond. 37 044006
[6]	Xian Y l, Huang S J, Zheng Z Y, Fan B F, Wu Z S, Jiang H and Wang G 2011 J. Crystal Growth 232 325
[7]	Takeya M and Ikeda M 2001 Jpn. J. Appl. Phys. 40 6260
[8]	Youn D H, Lachab M, Hao M S, Sugahara T, Takenaka H, Naoi Y and Sakai S 1999 Jpn. J. Appl. Phys. 38 631
[9]	Amano H, kito M, Hiramatsu K and Akasaki I 1989 Jpn. J. Appl. Phys. 28 L2112
[10]	Obloh H, Bachem K H, Kaufmann U, Kunzer M, Maier M, Ramakrishnan A and Schlotter P 1998 J. Crystal Growth 195 270
[11]	Yang J, Zhao D G, Jiang D S, Chen P, Liu Z S, Le L C, Li X J, He X G, Liu J P, Zhang S M, Wang H, Zhu J J and Yang H 2014 J. Appl. Phys. 115 163704
[12]	Tansley T L and Egan R J 1992 Phys. Rev. B 45 10942
[13]	Waki I, Fujioka H and Oshima M 2001 Appl. Phys. Lett. 78 2899
[14]	Chuo C C, Lee C M and Chyi J I 2001 Appl. Phys. Lett. 78 314
[15]	McCluskey M D, Romano L T, Krusor B S, Johnson N M, Suski T and Jun J 1998 Appl. Phys. Lett. 73 1281
[16]	Yang J, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Le L C, Li X J, He X G, Zhang L Q and Yang H 2016 Chin. Phys. B 25 027102
[17]	Chen J T, Forsberg U and Janzen E 2013 Appl. Phys. Lett. 102 193506
[18]	Kaufmann U, Kunzer M, Obloh H, Maier M, Manz C, Ramakrishnan A and Santic B 1999 Phys. Rev. B 59 5561
[19]	Kaufmann U, Kunzer M, maier M, Obloh H, Ramakrishnan A, Santic B and Schlotter P 1998 Appl. Phys. Lett. 72 1326
[20]	Amano H, Kitoh M, Hiramatsu K and Akasaki I 1990 J. Electrochem. Soc. 137 1639
[21]	Eunsoon O, Park H and Park Y 1998 Appl. Phys. Lett. 72 70
[22]	Kaufmann U, Schlotter P, Obloh H, Kohler K and Maier M 2000 Phys. Rev. B 62 10867
[23]	Parish G, Keller S, Denbaars S P and Mishra U K 2000 Electron. Mater. 29 16
[24]	Hiroki M, Oda Y, Watanabe N, Maeda N, Yokoyama H, Kumakura K and Yamamoto H 2013 J. Crystal Growth 382 36

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The residual C concentration control for low temperature growth p-type GaN

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