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Chin. Phys. B, 2015, Vol. 24(3): 037303    DOI: 10.1088/1674-1056/24/3/037303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Abstract  

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.

Keywords:  GeOI metal-oxide-semiconductor field-effect transistor      fringing capacitance      subthreshold swing      threshold voltage  
Received:  28 June 2014      Revised:  13 October 2014      Published:  05 March 2015
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.-r (Electrical properties of specific thin films)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant No. 61274112).

Corresponding Authors:  Xu Jing-Ping     E-mail:  jpxu@mail.hust.edu.cn

Cite this article: 

Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor 2015 Chin. Phys. B 24 037303

[1] Agrawal S and Fossum J G 2010 IEEE Trans. Electron Dev. 57 1069
[2] Bansal A, Paul B C and Roy K 2005 IEEE Trans. Electron Dev. 52 256
[3] Kim S H, Fossum J G and Yang J W 2006 IEEE Trans. Electron Dev. 53 2143
[4] Ji F, Xu J P, Lai P T and Li C X 2006 ICSICT'06 8th International Conference on Solid-State and Integrated Circuit Technology, October 23-26, 2006, Shanghai, China, p. 1318
[5] Kumar M J, Gupta S K and Venkataraman V 2006 IEEE Trans. Electron Dev. 53 706
[6] Wan B Y, Zhang X S and Feng Q 2012 College Physics 31 9
[7] Young K K 1989 IEEE Trans. Electron Dev. 36 399
[8] Zhu W J, Han J P and Ma T P 2004 IEEE Trans. Electron Dev. 51 98
[9] Fischetti M V, Neumayer D A and Cartier E A 2001 J. Appl. Phys. 90 4587
[10] Hutin L, Royer C L, Damlencourt J F, Hartmann J M, Grampeix H, Mazzocchi V, Tabone C, Previtali B, Pouydebasque A, Vinet M and Faynot O 2010 IEEE Electron Dev. Lett. 31 234
[11] Royer C L, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann J M, Roure M C, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M and Deleonibus S 2008 Solid State Electron. 52 1285
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