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Chin. Phys. B, 2013, Vol. 22(5): 057305    DOI: 10.1088/1674-1056/22/5/057305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers

Wang Sheng, Li Xiao-Qi, Bai Li-Juan, Xu Xiao-Guang, Miao Jun, Jiang Yong
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Abstract  Co2FeAl0.5Si0.5 (CFAS) based multilayers sandwiched by MgO layers have been deposited and annealed at different temperatures. Perpendicular magnetic anisotropy (PMA) with the magnetic anisotropy energy density Ku ≈ 2.5×106 erg/cm3 and the coercivity Hc=363 Oe has been achieved in the Si/SiO2/MgO (1.5 nm)/CFAS (2.5 nm)/MgO (0.8 nm)/Pt (5 nm) film annealed at 300 ℃. The strong PMA is mainly due to the top MgO layer. The structure can be used as top magnetic electrodes in half-metallic perpendicular magnetic tunnel junctions.
Keywords:  half-metallic ferromagnets      MgO layers      perpendicular magnetic anisotropy  
Received:  24 May 2012      Revised:  30 November 2012      Accepted manuscript online: 
PACS:  73.43.Qt (Magnetoresistance)  
  72.25.Ba (Spin polarized transport in metals)  
  68.35.Ct (Interface structure and roughness)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50831002, 51271020, 50971025, 51071022, and 11174031), the National Basic Research Program of China (Grant No. 2012CB932702), PCSIRT, Beijing Nova Program, China (Grant No. 2011031), the Beijing Municipal Natural Science Foundation, China (Grant No. 2102032), and the Fundamental Research Funds for the Central Universities, China.
Corresponding Authors:  Xu Xiao-Guang     E-mail:  xgxu@ustb.edu.cn

Cite this article: 

Wang Sheng, Li Xiao-Qi, Bai Li-Juan, Xu Xiao-Guang, Miao Jun, Jiang Yong Strong perpendicular magnetic anisotropy in Co2FeAl0.5Si0.5 film sandwiched by MgO layers 2013 Chin. Phys. B 22 057305

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