Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements

doi:10.1088/1674-1056/22/4/047303

Abstract The frequency dependence of admittance measurements (capacitance-voltage (C-V) and conductance-voltage (G/ω -V)) of Au/SnO₂/n-Si (MOS) capacitors was investigated by taking into account the effects of the interface states (N_ss) and series resistance (R_s) at room temperature. Admittance measurements were carried out in frequency and bias voltage ranges of 1 kHz-1 MHz and (-5 V)-(+9 V), respectively. The values of N_ss and R_s were determined by using a conductance method and estimating from the admittance measurements of the MOS capacitors. At low frequencies, the interface states can follow the AC signal and yield excess capacitance and conductance. In addition, the parallel conductance (G_p/ω) versus log (f) curves at various voltages include a peak due to the presence of interface states. It is observed that the N_ss and their time constant (τ) range from 1.23× 10¹² eV^-1·cm^-2 to 1.47× 10¹² eV^-1·cm^-2 and from 7.29× 10^-5 s to 1.81× 10^-5 s, respectively.

Keywords: MOS capacitor admittance measurements interface states

Received: 04 June 2012
Revised: 06 August 2012
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	73.20.-r	(Electron states at surfaces and interfaces)

Corresponding Authors: A. Tataroğlu
E-mail: ademt@gazi.edu.tr

Cite this article:

H. M. Baran, A. Tataroğlu Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements 2013 Chin. Phys. B 22 047303

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Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements

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Determination of interface states and their time constant for Au/SnO₂/n-Si (MOS) capacitors using admittance measurements