Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

doi:10.1088/1674-1056/22/1/018504

Abstract The optical and physical properties of InGaN light-emitting diode (LED) with a specific design of staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement of optical performance compared with the design of conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of LED could be one of the main reasons for these improvements.

Keywords: electron-blocking layer light-emitting diodes efficiency droop

Received: 12 May 2012
Revised: 18 June 2012
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Fund for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Project of Combination of Production and Research Guided by Ministry of Education, China (Grant No. 2010B090400192).

Corresponding Authors: Chen Jun
E-mail: jun.cheng@yahoo.com.cn

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Chen Jun (陈峻), Fan Guang-Han (范广涵), Zhang Yun-Yan (张运炎) Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer 2013 Chin. Phys. B 22 018504

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Improvement of characteristics of InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

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