| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal |
| Zhuo Shi-Yi(卓世异)a)b), Liu Xue-Chao(刘学超)a)†, Xiong Ze(熊泽)a)b), Yan Wen-Sheng(闫文盛)c), Xin Jun(忻隽)a), Yang Jian-Hua(杨建华)a), and Shi Er-Wei(施尔畏)a) |
a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;
c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China |
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Abstract Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method. The V concentration is determined to be 3.76 × 1017 at/cm3 and 6.14 × 1017 at/cm3 by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples, respectively. The undoped 6H-SiC shows diamagnetism, while the V-doped 6H-SiC exhibits weak ferromagnetism. The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample. However, the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality. It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.
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Received: 16 November 2011
Revised: 01 December 2011
Accepted manuscript online:
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PACS:
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75.50.Pp
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(Magnetic semiconductors)
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75.30.-m
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(Intrinsic properties of magnetically ordered materials)
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71.70.Gm
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(Exchange interactions)
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| Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176) and the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10). |
Corresponding Authors:
Liu Xue-Chao
E-mail: xcliu@mail.sic.ac.cn
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Cite this article:
Zhuo Shi-Yi(卓世异), Liu Xue-Chao(刘学超), Xiong Ze(熊泽), Yan Wen-Sheng(闫文盛), Xin Jun(忻隽), Yang Jian-Hua(杨建华), and Shi Er-Wei(施尔畏) Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal 2012 Chin. Phys. B 21 067503
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