A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

doi:10.1088/1674-1056/21/5/057304

Abstract We investigate the influence of voltage drop across the lightly doped drain (LDD) region and the built-in potential on MOSFETs, and develop a threshold voltage model for high-k gate dielectric MOSFETs with fully overlapped LDD structures by solving the two-dimensional Poisson's equation in the silicon and gate dielectric layers. The model can predict the fringing-induced barrier lowering effect and the short channel effect. It is also valid for non-LDD MOSFETs. Based on this model, the relationship between threshold voltage roll-off and three parameters, channel length, drain voltage and gate dielectric permittivity, is investigated. Compared with the non-LDD MOSFET, the LDD MOSFET depends slightly on channel length, drain voltage, and gate dielectric permittivity. The model is verified at the end of the paper.

Keywords: threshold voltage high-k gate dielectric fringing-induced barrier lowering short channel effect

Received: 07 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	12.39.Pn	(Potential models)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083), and the Fundamental Research Funds for the Central Universities of China (Grant No. 20110203110012).

Cite this article:

Ma Fei(马飞), Liu Hong-Xia(刘红侠), Kuang Qian-Wei(匡潜玮), and Fan Ji-Bin(樊继斌) A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures 2012 Chin. Phys. B 21 057304

[1]	Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
[2]	Hu S G, Hao Y, Ma X H, Cao Y R, Chen C and Wu X F 2009 Chin. Phys. B 18 5479
[3]	Wu T F, Zhang H M, Wang G Y and Hu H Y 2011 Acta Phys. Sin. 60 027305 (in Chinese)
[4]	Xu G B and Xu Q X 2009 Chin. Phys. B 18 768
[5]	Park D G and Wang X L 2010 ECS Trans. 28 39
[6]	Li J, Liu H X, Li B, Cao L and Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese)
[7]	Liu X Y, Kang J F, Sun L, Han R Q and Wang Y Y 2002 IEEE Electron Device Letters 23 270
[8]	Ji F, Xu J P and Lai P T 2007 Chin. Phys. 16 1757
[9]	Xie Q, Xu J, Ren T L and Taur Y 2010 Semiconductor Science and Technology 25 035012
[10]	Ji F, Xu J P, Lai P T, Chen W B and Li Y P 2006 Chin. J. Semiconductors 27 1725
[11]	Pimbley J M and Meindl J D 1989 IEEE Trans. Electron Devices 36 1711
[12]	Chen W S, Tian L L and Li Z J 2000 Chin. J. Semiconductors 21 431
[13]	Integrated Systems Engineering Corp. 2005 ISE--TCAD Mdraw Simulation User's Manual (Zurich:Switzerland) p. 59
[14]	Liu Z H, Hu C M, Huang J H, Chan T Y, Jeng M C, Ko P K and Cheng Y C 1993 IEEE Trans. Electron Device 40 86
[15]	Terrill K W, Hu C and Ko P K 1984 IEEE Electron Device Letters EDL-5 440

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A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

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