Impact of substrate bias on radiation-induced edge effects in MOSFETs

doi:10.1088/1674-1056/20/12/120702

Abstract This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

Keywords: ionizing radiation shallow trench isolation trapped charge total dose effects

Received: 19 April 2011
Revised: 21 June 2011
Accepted manuscript online:

PACS:	07.80.+b
	24.50.+g	(Direct reactions)

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Hu Zhi-Yuan(胡志远), Liu Zhang-Li(刘张李), Shao-Hua(邵华), Zhang Zheng-Xuan(张正选), Ning Bing-Xu(宁冰旭), Chen Ming(陈明), Bi Da-Wei(毕大炜), and Zou Shi-Chang(邹世昌) Impact of substrate bias on radiation-induced edge effects in MOSFETs 2011 Chin. Phys. B 20 120702

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