Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

doi:10.1088/1674-1056/19/10/107307

Abstract This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.

Keywords: light-emitting diode gallium nitride degradation V-shape pits

Received: 04 March 2010
Revised: 13 April 2010
Accepted manuscript online:

PACS:	61.80.Fe	(Electron and positron radiation effects)
	78.60.Hk	(Cathodoluminescence, ionoluminescence)
	78.66.-w	(Optical properties of specific thin films)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	85.40.Sz	(Deposition technology)
	85.60.Jb	(Light-emitting devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60990314, 60976009, 60577146, U0834001) and the National Key Basic Research and Development Project (973) of China (Grant No. 2007CB307004).

Cite this article:

Long Hao(龙浩), Fang Hao(方浩), Qi Sheng-Li(齐胜利), Sang Li-Wen(桑丽雯), Cao Wen-Yu(曹文彧), Yan Jian(颜建), Deng Jun-Jing(邓俊静), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义) Invariable optical properties of phosphor-free white light-emitting diode under electrical stress 2010 Chin. Phys. B 19 107307

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Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

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