Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so–gel spin coating

doi:10.1088/1674-1056/19/10/107306

Abstract ZnO thin films co-doped with Al and Sb with different concentrations and a fixed molar ratio of AlCl₃ to SbCl₃ at 1:2, are prepared by a sol–gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al and Sb are of wurtzite hexagonal ZnO with a very small distortion, and the biaxial stresses are 1.03×10⁸, 3.26×10⁸, 5.23×10⁸, and 6.97×10⁸Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5Ω·cm.

Keywords: ZnO thin films co-doped with Al and Sb sol–gel spin-coating method structure distortion optical and electrical properties

Received: 11 January 2010
Revised: 13 April 2010
Accepted manuscript online:

PACS:	68.55.-a	(Thin film structure and morphology)
	73.61.Ga	(II-VI semiconductors)
	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
	78.66.Hf	(II-VI semiconductors)
	81.15.-z	(Methods of deposition of films and coatings; film growth and epitaxy)
	81.20.Fw	(Sol-gel processing, precipitation)

Fund: Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122), and the Equipment Research Foundation of China (Grant No. 373974).

Cite this article:

Zhong Wen-Wu(钟文武), Liu Fa-Min(刘发民), Cai Lu-Gang(蔡鲁刚), Zhou Chuan-Cang(周传仓), Ding Peng(丁芃), and Zhang Huan(张嬛) Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so–gel spin coating 2010 Chin. Phys. B 19 107306

[1]	Xue S W, Zu X T, Shao L X, Yuan Z L, Xiang X and Deng H 2008 Chin. Phys. B 17 1674
[2]	Fang Z B, Tan Y S, Liu X Q, Yang Y H and Wang Y Y 2004 Chin. Phys. 13 1330
[3]	Zhang J F, Zhang Z Y, Zhang W H, Yan J F and Yong J N 2009 Chin. Phys. B 18 2508
[4]	Sharma P, Mansingh A and Sreenivas K 2002 Appl. Phys. Lett. 80 553
[5]	Wang D Y, Zhou J and Liu G Z 2009 J. Alloys Compd. 481 802
[6]	Kennedy J, Sundrakannan B, Katiyar R S, Markwitz A, Li Z and Gao W 2008 Curr. Appl. Phys. 8 291
[7]	He Y N, Zhang J W, Yang X D, Xu Q A, Liu X H, Zhu C C and Hou X 2005 Microelectr. J. 36 125
[8]	Ma K, Li H, Zhang H, Xu X L, Gong M G and Yang Z 2009 Chin. Phys. B 18 1942
[9]	Wu Y L, Zhang L W, Xie G L, Ni J and Chen Y H 2008 Solid State Commun. 148 247
[10]	He H P, Tang H P, Ye Z Z, Zhu L P, Zhao B H, Wang L and Li X H 2007 Appl. Phys. Lett. 90 023104
[11]	Masaki A and Masaya I 2008 Mater. Res. Bull. 43 3537
[12]	Bacaksiz E, Parlak M, Tomakin M, Ozcelik A, Karakhi z M, Altunbas M 2008 J. Alloys Compd. 466 447
[13]	Wang Y Z, Chu B L and He Q Y 2008 Vacuum 82 1229
[14]	Yahia S B, Znaidi L, Kanaev A and Petitet J P 2008 Spectrochim Acta A 71 1234
[15]	Yamamoto T and Yoshida H K 2001 Physica B 302--303 155
[16]	Yamamoto T 2002 Thin Solid Films 420 100
[17]	Kumar M, Kim T H, Kim S S and Lee B T 2006 Appl. Phys. Lett. 89 112103
[18]	Chen L L, Ye Z Z, Lu J G and Chu P K 2006 Appl. Phys. Lett. 89 252113
[19]	Limpijumnong S, Zhang S B, Wei S H and Park C H 2004 Phys. Rev. Lett. 92 155504
[20]	Saliha Ilican, Yasemin Caglar, Mujdat Caglar, Fahrettin Yakuphanoglu and Cui J B 2008 Physica E 41 96
[21]	Lim W T and Lee C H 1999 Thin Solid Films 353 12
[22]	Xu L H, Li X Y and Yuan J 2008 Superlattices and Microstruct. 44 276
[23]	Yang H P 2006 A Study of P-type Zinc Oxide Thin Flims (Montreal: Mcgill University Press) p. 40
[24]	Ye L X 2007 Semiconductor Physics (Beijing: Higher Education Press) p. 115 (in Chinese) endfootnotesize

[1]	Effects of preparation parameters on growth and properties of β-Ga₂O₃ film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[2]	Grain size and structure distortion characterization of α-MgAgSb thermoelectric material by powder diffraction Xiyang Li(李西阳), Zhigang Zhang(张志刚), Lunhua He(何伦华), Maxim Avdeev, Yang Ren(任洋), Huaizhou Zhao(赵怀周), and Fangwei Wang(王芳卫)†. Chin. Phys. B, 2020, 29(10): 106101.
[3]	Local structure distortion and spin Hamiltonian parameters of oxide-diluted magnetic semiconductor Mn-doped ZnO Yang Zi-Yuan(杨子元). Chin. Phys. B, 2009, 18(3): 1253-1260.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by so–gel spin coating

Cite this article:

Online attention