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Chin. Phys. B, 2008, Vol. 17(6): 2010-2017    DOI: 10.1088/1674-1056/17/6/013
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Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields

Yang Gui(杨癸)a)†, Tu Bi-Hong(涂必红)a), Li Guo-Hui(李国辉)b) Zhao Hong-Wei(赵宏伟)a), and Zhou Shi-Ping(周世平)a)
a Department of Physics, Shanghai University, Shanghai 200444, China; b Department of Communication Engineering, Shanghai University, Shanghai 200072, China
Abstract  This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency $\omega$ to the cyclotron frequency $\omega_{\rm c}$ and local minima at $\omega/\omega_{\rm c}={\rm integer}+1/4$.
Keywords:  heterostructure      chaos      bifurcation      resistance oscillation  
Received:  19 March 2007      Revised:  15 October 2007      Accepted manuscript online: 
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  05.45.-a (Nonlinear dynamics and chaos)  
  72.20.Ht (High-field and nonlinear effects)  
  73.43.-f (Quantum Hall effects)  
  77.22.Gm (Dielectric loss and relaxation)  
  78.70.Gq (Microwave and radio-frequency interactions)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60371033).

Cite this article: 

Yang Gui(杨癸), Tu Bi-Hong(涂必红), Li Guo-Hui(李国辉) Zhao Hong-Wei(赵宏伟), and Zhou Shi-Ping(周世平) Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields 2008 Chin. Phys. B 17 2010

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