Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature
Qi Le-Jun (漆乐俊)a, Ling Li (凌立)b, Li Wei-Qing (李维卿)a, Yang Xin-Ju (杨新菊)c, Gu Chang-Xin (顾昌鑫)b, Lu Ming (陆明)a
a Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, China; b Department of Materials Science, Fudan University, Shanghai 200433, China; c Surface Physics Laboratory, Fudan University, Shanghai 200433, China
Abstract Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley--Harper model fails to explain these data. By taking into account the Ehrlich--Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.
Received: 19 December 2004
Revised: 28 March 2005
Accepted manuscript online:
PACS:
68.35.B-
(Structure of clean surfaces (and surface reconstruction))
(Atomic, molecular, and ion beam impact and interactions with surfaces)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10374016), and the Science and Technology Commission of Shanghai (Grant No 03DJ14001).
Cite this article:
Qi Le-Jun (漆乐俊), Ling Li (凌立), Li Wei-Qing (李维卿), Yang Xin-Ju (杨新菊), Gu Chang-Xin (顾昌鑫), Lu Ming (陆明) Surface morphology evolution of Si(110) by ion sputtering as a function of sample temperature 2005 Chinese Physics 14 1626
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