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Chin. Phys., 2005, Vol. 14(11): 2348-2351    DOI: 10.1088/1009-1963/14/11/035
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Study on stability of hydrogenated amorphous silicon films

Chen Guang-Huaa, Zhang Wen-Lia, Ma Zhan-Jiea, Hu Yue-Huia, He Bina, Rong Yan-Donga, Zhu Xiu-Hongb, Ding Yic
a Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China; b Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China ; c Department of Physics, Lanzhou University, Lanzhou 730000, China
Abstract  Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (\sim 10^{5}) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (C_H}) as well as H--Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature,hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.
Keywords:  microstructure      hydrogenated amorphous silicon (a-Si:H) films      photosensitivity      hydrogen elimination (HE) model      stability  
Received:  24 January 2005      Revised:  20 June 2005      Published:  20 November 2005
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.55.-a (Thin film structure and morphology)  
  73.50.Pz (Photoconduction and photovoltaic effects)  
  73.61.Jc (Amorphous semiconductors; glasses)  
  78.30.Ly (Disordered solids)  
  78.66.Jg (Amorphous semiconductors; glasses)  
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201-1).

Cite this article: 

Chen Guang-Hua, Zhang Wen-Li, Ma Zhan-Jie, Hu Yue-Hui, He Bin, Rong Yan-Dong, Zhu Xiu-Hong, Ding Yi Study on stability of hydrogenated amorphous silicon films 2005 Chin. Phys. 14 2348

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