Abstract The electroluminescence of GexSi1-x/Si single quantum well was measured at temper-atures above room temperature along the growth direction and the direction normal to it. TO and NP peaks were resolved.
Received: 14 January 1995
Accepted manuscript online:
CHENG WEN-QIN (程文芹), CUI QIAN (崔堑), CAI LI-HONG (蔡丽红), HU QIANG (胡强), ZHOU JUN-MING (周均铭) ELECTROLUMINESCENCE SPECTRA OF GexSi1-x/Si SINGLE QUANTUM WELL 1995 Acta Physica Sinica (Overseas Edition) 4 856
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