|
|
Other articles related with "single event effect"：
|
|
78501 |
Xu Zhao(赵旭), Xuecheng Du(杜雪成), Xu Xiong(熊旭), Chao Ma(马超), Weitao Yang(杨卫涛), Bo Zheng(郑波), and Chao Zhou(周超) |
| |
|
Single event effects evaluation on convolution neural network in Xilinx 28 nm system on chip |
| |
|
|
Chin. Phys. B
2024 Vol.33 (7): 78501-078501
[Abstract]
(32)
[HTML 1 KB]
[PDF 10731 KB]
(18)
|
|
|
16104 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Yi-Wei Liu(刘益维), Xiao-Ping Ouyang(欧阳晓平), Jin-Xin Zhang(张晋新), Wu-Ying Ma(马武英), Feng-Qi Zhang(张凤祁), Ru-Xue Bai(白如雪), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
| |
|
Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect |
| |
|
|
Chin. Phys. B
2024 Vol.33 (1): 16104-16104
[Abstract]
(104)
[HTML 0 KB]
[PDF 2002 KB]
(14)
|
|
|
66105 |
Ya-Hui Feng(冯亚辉), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Jin-Xin Zhang(张晋新),Xiang-Li Zhong(钟向丽), Hong Zhang(张鸿), An-An Ju(琚安安),Ye Liu(刘晔), and Xiao-Ping Ouyang(欧阳晓平) |
| |
|
Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation |
| |
|
|
Chin. Phys. B
2023 Vol.32 (6): 66105-066105
[Abstract]
(189)
[HTML 0 KB]
[PDF 1458 KB]
(217)
|
|
|
46101 |
Li Cai(蔡莉), Ya-Qing Chi(池雅庆), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Ze He(贺泽), Hai-Bin Wang(王海滨), Qian Sun(孙乾), Rui-Qi Sun(孙瑞琪), Shuai Gao(高帅), Pei-Pei Hu(胡培培), Xiao-Yu Yan(闫晓宇), Zong-Zhen Li(李宗臻), and Jie Liu(刘杰) |
| |
|
Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains |
| |
|
|
Chin. Phys. B
2023 Vol.32 (4): 46101-046101
[Abstract]
(221)
[HTML 0 KB]
[PDF 1700 KB]
(114)
|
|
|
108504 |
Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒) |
| |
|
Investigation of single event effect in 28-nm system-on-chip with multi patterns |
| |
|
|
Chin. Phys. B
2020 Vol.29 (10): 108504-
[Abstract]
(449)
[HTML 1 KB]
[PDF 476 KB]
(107)
|
|
|
68503 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏) |
| |
|
Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD |
| |
|
|
Chin. Phys. B
2019 Vol.28 (6): 68503-068503
[Abstract]
(648)
[HTML 1 KB]
[PDF 1876 KB]
(149)
|
|
|
108501 |
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥) |
| |
|
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor |
| |
|
|
Chin. Phys. B
2018 Vol.27 (10): 108501-108501
[Abstract]
(633)
[HTML 1 KB]
[PDF 1529 KB]
(186)
|
|
|
76101 |
Jie Luo(罗捷), Tie-shan Wang(王铁山), Dong-qing Li(李东青), Tian-qi Liu(刘天奇), Ming-dong Hou(侯明东), You-mei Sun(孙友梅), Jing-lai Duan(段敬来), Hui-jun Yao(姚会军), Kai Xi(习凯), Bing Ye(叶兵), Jie Liu(刘杰) |
| |
|
Investigation of flux dependent sensitivity on single event effect in memory devices |
| |
|
|
Chin. Phys. B
2018 Vol.27 (7): 76101-076101
[Abstract]
(657)
[HTML 1 KB]
[PDF 1369 KB]
(219)
|
|
|
66105 |
Zhi-Feng Lei(雷志锋), Zhan-Gang Zhang(张战刚), Yun-Fei En(恩云飞), Yun Huang(黄云) |
| |
|
Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool |
| |
|
|
Chin. Phys. B
2018 Vol.27 (6): 66105-066105
[Abstract]
(728)
[HTML 1 KB]
[PDF 1455 KB]
(196)
|
|
|
88502 |
Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥) |
| |
|
Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor |
| |
|
|
Chin. Phys. B
2017 Vol.26 (8): 88502-088502
[Abstract]
(710)
[HTML 1 KB]
[PDF 714 KB]
(211)
|
|
|
88502 |
Li Pei (李培), Guo Hong-Xia (郭红霞), Guo Qi (郭旗), Zhang Jin-Xin (张晋新), Xiao Yao (肖尧), Wei Ying (魏莹), Cui Jiang-Wei (崔江维), Wen Lin (文林), Liu Mo-Han (刘默寒), Wang Xin (王信) |
| |
|
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment |
| |
|
|
Chin. Phys. B
2015 Vol.24 (8): 88502-088502
[Abstract]
(704)
[HTML 1 KB]
[PDF 1147 KB]
(348)
|
|
|
79401 |
He Yi-Bai (何益百), Chen Shu-Ming (陈书明) |
| |
|
Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients |
| |
|
|
Chin. Phys. B
2014 Vol.23 (7): 79401-079401
[Abstract]
(557)
[HTML 1 KB]
[PDF 996 KB]
(448)
|
|
|
46104 |
Yan Shao-An (燕少安), Tang Ming-Hua (唐明华), Zhao Wen (赵雯), Guo Hong-Xia (郭红霞), Zhang Wan-Li (张万里), Xu Xin-Yu (徐新宇), Wang Xu-Dong (王旭东), Ding Hao (丁浩), Chen Jian-Wei (陈建伟), Li Zheng (李正), Zhou Yi-Chun (周益春) |
| |
|
Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation |
| |
|
|
Chin. Phys. B
2014 Vol.23 (4): 46104-046104
[Abstract]
(802)
[HTML 1 KB]
[PDF 756 KB]
(524)
|
|
|
0 |
|
| |
|
Single Event Effect in Ferroelectric-Gate FET under Heavy-Ion Irradiation |
| |
|
|
Chin. Phys. B
Vol. (): 0-0
[Abstract]
(53)
[HTML 0 KB]
[PDF 0 KB]
(7)
|
|
|
96103 |
Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Zhao Fa-Zhan (赵发展), Liu Gang (刘刚), Han Zheng-Sheng (韩郑生), Geng Chao (耿超), Liu Jian-De (刘建德), Xi Kai (习凯), Duan Jing-Lai (段敬来), Yao Hui-Jun (姚会军), Mo Dan (莫丹), Luo Jie (罗捷), Gu Song (古松), Liu Tian-Qi (刘天奇) |
| |
|
Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers |
| |
|
|
Chin. Phys. B
2013 Vol.22 (9): 96103-096103
[Abstract]
(729)
[HTML 1 KB]
[PDF 898 KB]
(879)
|
|
|
86102 |
Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Su Hong (苏弘), Duan Jing-Lai (段敬来), Mo Dan (莫丹), Yao Hui-Jun (姚会军), Luo Jie (罗捷), Gu Song (古松), Geng Chao (耿超), Xi Kai (习凯) |
| |
|
Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation |
| |
|
|
Chin. Phys. B
2013 Vol.22 (8): 86102-086102
[Abstract]
(676)
[HTML 1 KB]
[PDF 363 KB]
(623)
|
|
|
36103 |
Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟) |
| |
|
Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films |
| |
|
|
Chin. Phys. B
2013 Vol.22 (3): 36103-036103
[Abstract]
(828)
[HTML 0 KB]
[PDF 523 KB]
(641)
|
|
|
68501 |
Zhang Ke-Ying (张科营), Guo Hong-Xia (郭红霞), Luo Yin-Hong (罗尹虹), Fan Ru-Yu (范如玉), Chen Wei (陈伟), Lin Dong-Sheng (林东生), Guo Gang (郭刚), Yan Yi-Hua (闫逸华) |
| |
|
First principles simulation technique for characterizing single event effects |
| |
|
|
Chin. Phys. B
2011 Vol.20 (6): 68501-068501
[Abstract]
(1322)
[HTML 1 KB]
[PDF 3188 KB]
(1711)
|
|
|
2773 |
He Chao-Hui(贺朝会) and Li Yong-Hong(李永宏) |
| |
|
Experimental study on radiation effects in floating gate read-only-memories and static random access memories |
| |
|
|
Chin. Phys. B
2007 Vol.16 (9): 2773-2778
[Abstract]
(1400)
[HTML 1 KB]
[PDF 686 KB]
(556)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
