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Investigation of single event effect in 28-nm system-on-chip with multi patterns |
Wei-Tao Yang(杨卫涛)1,4, Yong-Hong Li(李永宏)1,†, Ya-Xin Guo(郭亚鑫)1, Hao-Yu Zhao(赵浩昱)1, Yang Li(李洋)1, Pei Li(李培)1, Chao-Hui He(贺朝会)1, Gang Guo(郭刚)2, Jie Liu(刘杰)3, Sheng-Sheng Yang(杨生胜)5, and Heng An(安恒)5 |
1 School of Nuclear Science & Technology, Xi’an Jiaotong University, Xi’an 710049, China 2 National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China 3 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 4 Dipartimento di Automatica e Informatica, Politecnico di Torino, Torino 10129, Italy 5 Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China |
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Abstract Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and susceptibilities in different processor configurations with data accessing patterns were investigated. The patterns included the sole processor (SP) and asymmetric multiprocessing (AMP) patterns with static and dynamic data accessing. Single event upset (SEU) cross sections in static accessing can be more than twice as high as those of the dynamic accessing, and processor configuration pattern is not a critical factor for the SEU cross sections. Cross section interval of upset events was evaluated and the soft error rates in aerospace environment were predicted for the SoC. The tests also indicated that ultra-high linear energy transfer (LET) particle can cause exception currents in the 28-nm SoC, and some even are lower than the normal case.
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Received: 07 May 2020
Revised: 19 May 2020
Accepted manuscript online: 05 June 2020
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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21.60.Ka
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(Monte Carlo models)
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Corresponding Authors:
†Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn
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About author: †Corresponding author. E-mail: yonghongli@mail.xjtu.edu.cn * Project supported by the National Natural Science Foundation of China (Grant Nos. 11575138, 11835006, 11690040, and 11690043), the Fund from Innovation Center of Radiation Application (Grant No. KFZC2019050321), the Fund from the Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics (Grant No. ZWK1804), and the Program of China Scholarships Council (Grant No. 201906280343). |
Cite this article:
Wei-Tao Yang(杨卫涛), Yong-Hong Li(李永宏)†, Ya-Xin Guo(郭亚鑫), Hao-Yu Zhao(赵浩昱), Yang Li(李洋), Pei Li(李培), Chao-Hui He(贺朝会), Gang Guo(郭刚), Jie Liu(刘杰), Sheng-Sheng Yang(杨生胜), and Heng An(安恒) Investigation of single event effect in 28-nm system-on-chip with multi patterns 2020 Chin. Phys. B 29 108504
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