Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

doi:10.1088/1674-1056/ac8e9c

Abstract The variations of single event transient (SET) pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor (FinFET) inverter chains with different driven strengths are measured at different temperatures. Three-dimensional (3D) technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature. Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase of inverter driven strength will change the layout topology, which has a complex influence on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

Keywords: heavy ion single event effect single event transient FinFET inverter chain

Received: 04 July 2022
Revised: 19 August 2022
Accepted manuscript online: 02 September 2022

PACS:	61.82.Fk	(Semiconductors)
	61.80.Jh	(Ion radiation effects)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019, 12105339, and 62174180) and the Opening Special Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, China (Grant No. SKLIPR2113).

Corresponding Authors: Li Cai, Bing Ye, Jie Liu
E-mail: caili@impcas.ac.cn;yebing@impcas.ac.cn;j.liu@impcas.ac.cn

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Li Cai(蔡莉), Ya-Qing Chi(池雅庆), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Ze He(贺泽), Hai-Bin Wang(王海滨), Qian Sun(孙乾), Rui-Qi Sun(孙瑞琪), Shuai Gao(高帅), Pei-Pei Hu(胡培培), Xiao-Yu Yan(闫晓宇), Zong-Zhen Li(李宗臻), and Jie Liu(刘杰) Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains 2023 Chin. Phys. B 32 046101

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Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

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