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Other articles related with "rectifier"：
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64402 |
Fu-Ye Du(杜甫烨), Wang Zhang(张望), Hui-Qiong Wang(王惠琼), and Jin-Cheng Zheng(郑金成) |
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Enhancement of thermal rectification by asymmetry engineering of thermal conductivity and geometric structure for multi-segment thermal rectifier |
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Chin. Phys. B
2023 Vol.32 (6): 64402-064402
[Abstract]
(243)
[HTML 1 KB]
[PDF 1892 KB]
(99)
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28502 |
Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰) |
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Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection |
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Chin. Phys. B
2023 Vol.32 (2): 28502-028502
[Abstract]
(315)
[HTML 0 KB]
[PDF 902 KB]
(334)
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38501 |
Zi-Jie Zhou(周子杰), Xiang-Liang Jin(金湘亮), Yang Wang(汪洋), and Peng Dong(董鹏) |
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New DDSCR structure with high holding voltage for robust ESD applications |
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Chin. Phys. B
2021 Vol.30 (3): 38501-
[Abstract]
(431)
[HTML 1 KB]
[PDF 1487 KB]
(77)
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98502 |
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) |
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications |
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Chin. Phys. B
2020 Vol.29 (9): 98502-098502
[Abstract]
(830)
[HTML 0 KB]
[PDF 1050 KB]
(158)
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68503 |
Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰) |
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Design of a novel high holding voltage LVTSCR with embedded clamping diode |
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Chin. Phys. B
2020 Vol.29 (6): 68503-068503
[Abstract]
(629)
[HTML 1 KB]
[PDF 645 KB]
(121)
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38503 |
Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东) |
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High performance lateral Schottky diodes based on quasi-degenerated Ga2O3 |
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Chin. Phys. B
2019 Vol.28 (3): 38503-038503
[Abstract]
(794)
[HTML 1 KB]
[PDF 714 KB]
(334)
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128501 |
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) |
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress |
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Chin. Phys. B
2016 Vol.25 (12): 128501-128501
[Abstract]
(754)
[HTML 1 KB]
[PDF 2266 KB]
(292)
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87201 |
Xiao-Chuan Deng(邓小川), Xi-Xi Chen(陈茜茜), Cheng-Zhan Li(李诚瞻), Hua-Jun Shen(申华军), Jin-Ping Zhang(张金平) |
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Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers |
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Chin. Phys. B
2016 Vol.25 (8): 87201-087201
[Abstract]
(678)
[HTML 1 KB]
[PDF 1372 KB]
(475)
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57203 |
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) |
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
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Chin. Phys. B
2014 Vol.23 (5): 57203-057203
[Abstract]
(727)
[HTML 1 KB]
[PDF 498 KB]
(574)
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128503 |
Wang Ying (王颖), Li Ting (李婷), Cao Fei (曹菲), Shao Lei (邵雷), Chen Yu-Xian (陈宇贤) |
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Junction barrier Schottky rectifier with improved P-well region |
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Chin. Phys. B
2012 Vol.21 (12): 128503-128503
[Abstract]
(1108)
[HTML 1 KB]
[PDF 359 KB]
(799)
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87304 |
Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics |
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Chin. Phys. B
2011 Vol.20 (8): 87304-087304
[Abstract]
(1516)
[HTML 0 KB]
[PDF 7700 KB]
(2440)
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87202 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) |
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region |
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Chin. Phys. B
2010 Vol.19 (8): 87202-087202
[Abstract]
(1880)
[HTML 0 KB]
[PDF 303 KB]
(902)
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47201 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) |
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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension |
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Chin. Phys. B
2010 Vol.19 (4): 47201-047201
[Abstract]
(1528)
[HTML 1 KB]
[PDF 298 KB]
(709)
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