INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress |
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) |
Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
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Received: 10 June 2016
Revised: 12 July 2016
Accepted manuscript online:
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PACS:
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85.30.Kk
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(Junction diodes)
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85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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41.20.Cv
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(Electrostatics; Poisson and Laplace equations, boundary-value problems)
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52.35.Fp
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(Electrostatic waves and oscillations (e.g., ion-acoustic waves))
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Fund: Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002). |
Corresponding Authors:
Yuan Wang
E-mail: wangyuan@pku.edu.cn
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Cite this article:
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress 2016 Chin. Phys. B 25 128501
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[1] |
Liou J J 2012 Proc. 28th Int. Conf. Microelectronics (MIEL), May 13-16, 2012, NIS, Serbia, p. 11
|
[2] |
Wang Y, Jia S, Sun L, Zhang G G, Zhang X and Ji L J 2007 Acta Phys. Sin. 56 7242 (in Chinese)
|
[3] |
Chen W Y, Rosenbaum E and Ker M D 2012 IEEE Trans. Dev. Mater. Rel. 12 10
|
[4] |
Wang Y, Jia S, Chen Z J and Ji L J 2006 Chin. Phys. 15 2297
|
[5] |
Gauthier R, Abou-Khalil M, Chatty K, Mitra S and Li J J 2009 Proc. EOS/ESD Symp., August 30-Septemper 4, 2009, Anaheim, CA, USA, p. 1
|
[6] |
Li J J, Sarro J D, Li Y and Gauthier R 2013 Proc. EOS/ESD Symp., Septempber 10-12, 2013, Las Vegas, NV, USA, p. 1
|
[7] |
Ahmed G, Xia T and Gauthier R 2014 Proc. 27th Int. Conf. System-on-Chip (SOCC), Septemper 2-5, 2014, Las Vegas, NV, USA, p. 109
|
[8] |
Zhang L Z, Wang Y, Lu G Y, Cao J and Zhang X 2015 Chin. Phys. B 24 108503
|
[9] |
Li J J, Gauthier R, Chatty K, Mitra S, Li H M, Wang X L, Halbach R and Seguin C 2007 Proc. EOS/ESD Symp., Septemper 16-21, 2007, Anaheim, CA, USA, p. 4A.2-1
|
[10] |
Mishra R, Li J J, Di Sarro J, Campi J and Gauthier J 2012 Proc. EOS/ESD Symp., Septemper 9-14, 2012, Tucson, AZ, USA, p. 1
|
[11] |
Di Sarro J, Chatty K, Gauthier R and Rosenbaum E 2007 Proc. IEEE Int. Rel. Phys. Symp., April 15-19, 2007, Phoenix, AZ, USA, p. 348
|
[12] |
Russ C, Mergens M P J, Verhaege K G, Armer J, Jozwiak P C, Kolluri G and Avery L R 2001 Proc. EOS/ESD Symp., September 11-13, 2001, Portland, OR, USA, p. 22
|
[13] |
Jang S L, Gau M S and Lin J K 2000 Solid-State Electron. 44 1297
|
[14] |
Marichal O, Wybo G, Van Camp B, Vanysacker P and Keppens B 2005 Proc. EOS/ESD Symp., September 8-16, 2005, Tucson, AZ, USA, p. 1
|
[15] |
Zhang P, Wang Y, Jia S and Zhang X 2012 Semicond. Sci. Technol. 27 35006
|
[16] |
Wang Y, Lu G Y, Cao J, Jia S, Zhang G and Zhang X 2013 Proc. IEEE Int. Physical and Failure Analysis of Integrated Circuits Symp., July 15-19, 2013, Suzhou, China, p. 720
|
[17] |
Ker M D and Lo W Y 2000 J. Solid-State Circuit 35 601
|
[18] |
Voldman S and Gerosa G 1994 Proc. IEEE Int. Electron Devices Meeting (IEDM), December 11-14, 1994, San Francisco, CA, USA, p. 277
|
[19] |
Dabral S, Aslett R and Maloney T 1994 J. Electrostatics 33 357
|
[20] |
Lin C Y, Wu P H and Ker M D 2015 IEEE Trans. Electron Dev. 63 531
|
[21] |
Miao M, Dong S R, Wu J, Liou J J, Ma F, Li H and Han Y 2012 IEEE Electron Dev. Lett. 33 893
|
[22] |
Shrivastava M, Schneider J, Jain R, Baghini M S, Gossner H and Rao V R 2009 Proc. EOS/ESD Symp., August 30-September 4, 2009, Anaheim, CA, USA, p. 1
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