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Other articles related with "metal-oxide-semiconductor"：
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108503 |
Hong Zhang(张鸿), Hong-Xia Guo(郭红霞), Zhi-Feng Lei(雷志锋), Chao Peng(彭超), Wu-Ying Ma(马武英), Di Wang(王迪), Chang-Hao Sun(孙常皓), Feng-Qi Zhang(张凤祁), Zhan-Gang Zhang(张战刚), Ye Yang(杨业), Wei Lv(吕伟), Zhong-Ming Wang(王忠明), Xiang-Li Zhong(钟向丽), and Xiao-Ping Ouyang(欧阳晓平) |
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Proton induced radiation effect of SiC MOSFET under different bias |
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Chin. Phys. B
2023 Vol.32 (10): 108503-108503
[Abstract]
(95)
[HTML 0 KB]
[PDF 1463 KB]
(22)
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28504 |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平) |
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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation |
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Chin. Phys. B
2023 Vol.32 (2): 28504-028504
[Abstract]
(280)
[HTML 1 KB]
[PDF 1582 KB]
(116)
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58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
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Chin. Phys. B
2019 Vol.28 (5): 58503-058503
[Abstract]
(668)
[HTML 1 KB]
[PDF 1019 KB]
(212)
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37201 |
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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Chin. Phys. B
2019 Vol.28 (3): 37201-037201
[Abstract]
(647)
[HTML 1 KB]
[PDF 1984 KB]
(155)
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18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
(584)
[HTML 1 KB]
[PDF 1276 KB]
(161)
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47208 |
Su-Zhen Luan(栾苏珍), Yu-Cheng Wang(汪钰成), Yin-Tao Liu(刘银涛), Ren-Xu Jia(贾仁需) |
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Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors |
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Chin. Phys. B
2018 Vol.27 (4): 47208-047208
[Abstract]
(667)
[HTML 1 KB]
[PDF 1054 KB]
(235)
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114212 |
Lindong Ma(马林东), Yudong Li(李豫东), Qi Guo(郭旗), Lin Wen(文林), Dong Zhou(周东), Jie Feng(冯婕), Yuan Liu(刘元), Junzhe Zeng(曾骏哲), Xiang Zhang(张翔), Tianhui Wang(王田珲) |
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Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors |
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Chin. Phys. B
2017 Vol.26 (11): 114212-114212
[Abstract]
(595)
[HTML 1 KB]
[PDF 643 KB]
(321)
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107101 |
Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO |
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Chin. Phys. B
2017 Vol.26 (10): 107101-107101
[Abstract]
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[HTML 1 KB]
[PDF 1086 KB]
(363)
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97101 |
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices |
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Chin. Phys. B
2016 Vol.25 (9): 97101-097101
[Abstract]
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78501 |
Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊) |
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Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices |
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Chin. Phys. B
2016 Vol.25 (7): 78501-078501
[Abstract]
(1018)
[HTML 1 KB]
[PDF 612 KB]
(513)
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37306 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
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Chin. Phys. B
2016 Vol.25 (3): 37306-037306
[Abstract]
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38503 |
Liuan Li(李柳暗), Jiaqi Zhang(张家琦), Yang Liu(刘扬), Jin-Ping Ao(敖金平) |
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Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature |
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Chin. Phys. B
2016 Vol.25 (3): 38503-038503
[Abstract]
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[PDF 371 KB]
(378)
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38504 |
Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军) |
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Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain |
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Chin. Phys. B
2016 Vol.25 (3): 38504-038504
[Abstract]
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(476)
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127306 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Xue Jun-Shuai (薛军帅), Zhu Jie-Jie (祝杰杰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (12): 127306-127306
[Abstract]
(759)
[HTML 1 KB]
[PDF 472 KB]
(521)
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97304 |
Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Recovery of PMOSFET NBTI under different conditions |
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Chin. Phys. B
2015 Vol.24 (9): 97304-097304
[Abstract]
(808)
[HTML 1 KB]
[PDF 362 KB]
(395)
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37303 |
Fan Min-Min (范敏敏), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Bai Yu-Rong (白玉蓉), Huang Yong (黄勇) |
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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (3): 37303-037303
[Abstract]
(743)
[HTML 0 KB]
[PDF 304 KB]
(479)
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18501 |
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军) |
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GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics |
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Chin. Phys. B
2015 Vol.24 (1): 18501-018501
[Abstract]
(645)
[HTML 0 KB]
[PDF 385 KB]
(509)
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118506 |
Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元) |
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Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack |
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Chin. Phys. B
2014 Vol.23 (11): 118506-118506
[Abstract]
(516)
[HTML 1 KB]
[PDF 587 KB]
(432)
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17701 |
Tan Zhen (谭桢), Zhao Lian-Feng (赵连锋), Wang Jing (王敬), Xu Jun (许军) |
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Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation |
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Chin. Phys. B
2014 Vol.23 (1): 17701-017701
[Abstract]
(615)
[HTML 1 KB]
[PDF 520 KB]
(544)
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117308 |
Lan Lan (蓝澜), Gou Hong-Yan (苟鸿雁), Ding Shi-Jin (丁士进), Zhang Wei (张卫) |
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Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application |
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Chin. Phys. B
2013 Vol.22 (11): 117308-117308
[Abstract]
(544)
[HTML 1 KB]
[PDF 443 KB]
(435)
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97301 |
Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑) |
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Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer |
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Chin. Phys. B
2013 Vol.22 (9): 97301-097301
[Abstract]
(618)
[HTML 1 KB]
[PDF 271 KB]
(550)
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77306 |
Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚) |
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Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77306-077306
[Abstract]
(711)
[HTML 1 KB]
[PDF 503 KB]
(635)
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117701 |
Liu Guan-Zhou (刘冠洲), Li Cheng (李成), Lu Chang-Bao (路长宝), Tang Rui-Fan (唐锐钒), Tang Meng-Rao (汤梦饶), Wu Zheng (吴政), Yang Xu (杨旭), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩 ) |
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Wet thermal annealing effect on TaN/HfO2/Ge metal–oxide–semiconductor capacitors with and without a GeO2 passivation layer |
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Chin. Phys. B
2012 Vol.21 (11): 117701-117701
[Abstract]
(1129)
[HTML 1 KB]
[PDF 452 KB]
(1256)
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107306 |
Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙) |
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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs |
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Chin. Phys. B
2012 Vol.21 (10): 107306-107306
[Abstract]
(1006)
[HTML 1 KB]
[PDF 197 KB]
(971)
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78502 |
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) |
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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS |
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Chin. Phys. B
2012 Vol.21 (7): 78502-078502
[Abstract]
(1465)
[HTML 1 KB]
[PDF 152 KB]
(1039)
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67305 |
Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67305-067305
[Abstract]
(1211)
[HTML 1 KB]
[PDF 549 KB]
(2061)
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27304 |
Jiang Xiang-Wei(姜向伟) and Li Shu-Shen(李树深) |
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Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs |
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Chin. Phys. B
2012 Vol.21 (2): 27304-027304
[Abstract]
(1218)
[HTML 1 KB]
[PDF 748 KB]
(1229)
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17304 |
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric |
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Chin. Phys. B
2012 Vol.21 (1): 17304-017304
[Abstract]
(1371)
[HTML 1 KB]
[PDF 244 KB]
(1590)
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47308 |
Li Wei(李卫), Xu Ling(徐岭), Zhao Wei-Ming(赵伟明), Ding Hong-Lin(丁宏林), Ma Zhong-Yuan(马忠元), Xu Jun(徐骏), and Chen Kun-Ji(陈坤基) |
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Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory |
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Chin. Phys. B
2010 Vol.19 (4): 47308-047308
[Abstract]
(1570)
[HTML 1 KB]
[PDF 1030 KB]
(1419)
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1879 |
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) |
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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Chin. Phys. B
2006 Vol.15 (8): 1879-1882
[Abstract]
(1500)
[HTML 1 KB]
[PDF 381 KB]
(622)
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