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Other articles related with "hardness":
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96102 |
Chun-Yang Luo(罗春阳), Bo Cui(崔博), Liu-Jie Xu(徐流杰), Le Zong(宗乐), Chuan Xu(徐川), En-Gang Fu(付恩刚), Xiao-Song Zhou(周晓松), Xing-Gui Long(龙兴贵), Shu-Ming Peng(彭述明), Shi-Zhong Wei(魏世忠), and Hua-Hai Shen(申华海) |
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Microstructure and hardening effect of pure tungsten and ZrO2 strengthened tungsten under carbon ion irradiation at 700℃ |
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Chin. Phys. B
2022 Vol.31 (9): 96102-096102
[Abstract]
(377)
[HTML 0 KB]
[PDF 6200 KB]
(71)
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66101 |
Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇) |
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Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering |
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Chin. Phys. B
2022 Vol.31 (6): 66101-066101
[Abstract]
(322)
[HTML 1 KB]
[PDF 6265 KB]
(56)
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108103 |
Teng Ma(马腾), Pinwen Zhu(朱品文), and Xiaohui Yu(于晓辉) |
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Progress in functional studies of transition metal borides |
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Chin. Phys. B
2021 Vol.30 (10): 108103-108103
[Abstract]
(448)
[HTML 0 KB]
[PDF 2373 KB]
(362)
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38105 |
Jingzhe Fan(范静哲), Weixia Shen(沈维霞), Zhuangfei Zhang(张壮飞, Chao Fang(房超), Yuewen Zhang(张跃文), Liangchao Chen(陈良超), Qianqian Wang(王倩倩), Biao Wan(万彪), and Xiaopeng Jia(贾晓鹏) |
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Properties of B4C-TiB2 ceramics prepared by spark plasma sintering |
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Chin. Phys. B
2021 Vol.30 (3): 38105-
[Abstract]
(350)
[HTML 1 KB]
[PDF 1779 KB]
(129)
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66201 |
Chang-Chun Wang(王常春), Le-Le Song(宋乐乐) |
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Nanosheet-structured B4C with high hardness up to 42 GPa |
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Chin. Phys. B
2019 Vol.28 (6): 66201-066201
[Abstract]
(592)
[HTML 1 KB]
[PDF 1328 KB]
(167)
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106202 |
Jun Yang(杨俊), Fa-Ming Gao(高发明), Yong-Shan Liu(刘永山) |
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Theoretical calculations of hardness and metallicity for multibond hexagonal 5d transition metal diborides with ReB2 structure |
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Chin. Phys. B
2017 Vol.26 (10): 106202-106202
[Abstract]
(566)
[HTML 1 KB]
[PDF 669 KB]
(154)
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46301 |
Shi-Quan Feng(冯世全), Ling-Li Wang(王伶俐), Xiao-Xu Jiang(姜晓旭), Hai-Nin Li(李海宁), Xin-Lu Cheng(程新路), Lei Su(苏磊) |
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High-pressure dynamic, thermodynamic properties, and hardness of CdP2 |
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Chin. Phys. B
2017 Vol.26 (4): 46301-046301
[Abstract]
(707)
[HTML 1 KB]
[PDF 434 KB]
(308)
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107103 |
M A Hadi, M S Ali |
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New ordered MAX phase Mo2TiAlC2: Elastic and electronic properties from first-principles |
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Chin. Phys. B
2016 Vol.25 (10): 107103-107103
[Abstract]
(531)
[HTML 1 KB]
[PDF 7476 KB]
(457)
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65204 |
Jamil Siddiqui, Tousif Hussain, Riaz Ahmad, Nida Khalid |
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Effect of deposition parameters on structural and mechanicalproperties of niobium nitride synthesized by plasma focus device |
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Chin. Phys. B
2015 Vol.24 (6): 65204-065204
[Abstract]
(557)
[HTML 1 KB]
[PDF 3599 KB]
(298)
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105203 |
U. Ikhlaq, R. Ahmad, M. Shafiq, S. Saleem, M. S. Shah, T. Hussain, I. A. Khan, K. Abbas, M. S. Abbas |
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Nitriding molybdenum: Effects of duration and fill gas pressure when using 100-Hz pulse DC discharge technique |
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Chin. Phys. B
2014 Vol.23 (10): 105203-105203
[Abstract]
(661)
[HTML 1 KB]
[PDF 3113 KB]
(689)
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97704 |
Gao Xu-Peng (高旭鹏), Jiang Ye-Hua (蒋业华), Liu Yang-Zhen (刘洋赈), Zhou Rong (周荣), Feng Jing (冯晶) |
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Stability and elastic properties of NbxCy compounds |
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Chin. Phys. B
2014 Vol.23 (9): 97704-097704
[Abstract]
(552)
[HTML 1 KB]
[PDF 2189 KB]
(723)
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66805 |
Wang Ming-E (王明娥), Ma Guo-Jia (马国佳), Dong Chuang (董闯), Gong Shui-Li (巩水利) |
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Preparation and characterization of thick cubic boron nitride films |
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Chin. Phys. B
2014 Vol.23 (6): 66805-066805
[Abstract]
(552)
[HTML 1 KB]
[PDF 344 KB]
(375)
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26201 |
Pu Chun-Ying (濮春英), Zhou Da-Wei (周大伟), Bao Dai-Xiao (包代小), Lu Cheng (卢成), Jin Xi-Lian (靳希联), Su Tai-Chao (宿太超), Zhang Fei-Wu (张飞武) |
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Elastic and thermodynamic properties of vanadium nitride under pressure and the effect of metallic bonding on its hardness |
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Chin. Phys. B
2014 Vol.23 (2): 26201-026201
[Abstract]
(917)
[HTML 1 KB]
[PDF 338 KB]
(979)
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46202 |
Haci Ozisik, Engin Deligoz, Kemal Colakoglu, Gokhan Surucu |
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Structural and mechanical stability of rare-earth diborides |
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Chin. Phys. B
2013 Vol.22 (4): 46202-046202
[Abstract]
(640)
[HTML 1 KB]
[PDF 207 KB]
(1228)
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116104 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Yu Fang (于芳), Li Ning (李宁 ) |
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Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide |
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Chin. Phys. B
2012 Vol.21 (11): 116104-116104
[Abstract]
(1046)
[HTML 1 KB]
[PDF 628 KB]
(532)
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86103 |
Liu Jun (刘俊), Kuang Xiao-Yu (邝小渝), Wang Zhen-Hua (王振华), Huang Xiao-Fen (黄肖芬 ) |
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Pressure-induced structural transition and thermodynamic properties of RhN2 and effect of metallic bonding on its hardness |
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Chin. Phys. B
2012 Vol.21 (8): 86103-086103
[Abstract]
(1255)
[HTML 1 KB]
[PDF 270 KB]
(642)
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67101 |
Ding Ying-Chun(丁迎春), Chen Min(陈敏), Gao Xiu-Ying(高秀英), and Jiang Meng-Heng(蒋孟衡) |
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Theoretical investigation on the electronic structure, elastic properties, and intrinsic hardness of Si2N2O |
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Chin. Phys. B
2012 Vol.21 (6): 67101-067101
[Abstract]
(1436)
[HTML 1 KB]
[PDF 792 KB]
(1609)
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106106 |
Tang Hai-Ma(唐海马), Zheng Zhong-Shan(郑中山), Zhang En-Xia(张恩霞), Yu Fang(于芳), Li Ning(李宁), and Wang Ning-Juan(王宁娟) |
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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers |
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Chin. Phys. B
2010 Vol.19 (10): 106106-106106
[Abstract]
(1385)
[HTML 1 KB]
[PDF 818 KB]
(772)
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16201 |
Zhao Wen-Jie(赵文杰), Xu Hong-Bin(许红斌), and Wang Yuan-Xu(王渊旭) |
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Prediction of a superhard material of ReN4 with a high shear modulus |
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Chin. Phys. B
2010 Vol.19 (1): 16201-016201
[Abstract]
(1480)
[HTML 1 KB]
[PDF 318 KB]
(671)
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3061 |
Fu Cheng-Wu(傅成武), Zhou Hao-Shen(周豪慎), and Chen Ming-Qing(陈明清) |
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Studies on organic binders with high infrared transparency |
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Chin. Phys. B
2009 Vol.18 (7): 3061-3065
[Abstract]
(1555)
[HTML 1 KB]
[PDF 315 KB]
(1327)
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1888 |
Feng Yu-Dong(冯煜东), Xu Chao(胥超), Wang Yi(王艺), and Zhang Fu-Jia(张福甲) |
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Deposition of carbon nitride films for space application |
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Chin. Phys. B
2006 Vol.15 (8): 1888-1891
[Abstract]
(891)
[HTML 1 KB]
[PDF 112 KB]
(379)
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565 |
Zheng Zhong-Shan (郑中山), Liu Zhong-Li (刘忠立), Zhang Guo-Qiang (张国强), Li Ning (李宁), Fan Kai (范楷), Zhang En-Xia (张恩霞), Yi Wan-Bing (易万兵), Chen Meng (陈猛), Wang Xi (王曦) |
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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET |
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Chin. Phys. B
2005 Vol.14 (3): 565-570
[Abstract]
(1244)
[HTML 1 KB]
[PDF 279 KB]
(964)
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