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Other articles related with "barrier height"：
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87101 |
Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉) |
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Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain |
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Chin. Phys. B
2022 Vol.31 (8): 87101-087101
[Abstract]
(395)
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[PDF 4396 KB]
(118)
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98801 |
Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri |
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Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells |
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Chin. Phys. B
2020 Vol.29 (9): 98801-098801
[Abstract]
(494)
[HTML 0 KB]
[PDF 2363 KB]
(137)
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117303 |
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) |
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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure |
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Chin. Phys. B
2019 Vol.28 (11): 117303-117303
[Abstract]
(711)
[HTML 1 KB]
[PDF 594 KB]
(146)
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(799)
[HTML 1 KB]
[PDF 929 KB]
(312)
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77303 |
Guo-Cai Wang(王国才), Liang-Mei Wu(吴良妹), Jia-Hao Yan(严佳浩), Zhang Zhou(周璋), Rui-Song Ma(马瑞松), Hai-Fang Yang(杨海方), Jun-Jie Li(李俊杰), Chang-Zhi Gu(顾长志), Li-Hong Bao(鲍丽宏), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧) |
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Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices |
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Chin. Phys. B
2018 Vol.27 (7): 77303-077303
[Abstract]
(569)
[HTML 1 KB]
[PDF 975 KB]
(276)
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27304 |
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾) |
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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction |
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Chin. Phys. B
2016 Vol.25 (2): 27304-027304
[Abstract]
(636)
[HTML 1 KB]
[PDF 689 KB]
(510)
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77306 |
Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) |
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Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride |
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Chin. Phys. B
2015 Vol.24 (7): 77306-077306
[Abstract]
(730)
[HTML 1 KB]
[PDF 340 KB]
(371)
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57504 |
A. Tataroğlu, A. A. Hendi, R. H. Alorainy, F. Yakuphanoğlu |
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A new aluminum iron oxide Schottky photodiode designed via sol-gel coating method |
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Chin. Phys. B
2014 Vol.23 (5): 57504-057504
[Abstract]
(688)
[HTML 1 KB]
[PDF 719 KB]
(780)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(713)
[HTML 1 KB]
[PDF 268 KB]
(739)
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68402 |
Adem Tataroğlu |
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Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes |
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Chin. Phys. B
2013 Vol.22 (6): 68402-068402
[Abstract]
(680)
[HTML 1 KB]
[PDF 629 KB]
(1193)
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87305 |
Wang Yue-Hu(王悦湖), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Song Qing-Wen(宋庆文), and Jia Ren-Xu(贾仁需) |
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Al/Ti/4H–SiC Schottky barrier diodes with inhomogeneous barrier heights |
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Chin. Phys. B
2011 Vol.20 (8): 87305-087305
[Abstract]
(1872)
[HTML 1 KB]
[PDF 164 KB]
(1316)
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97304 |
Ru Guo-Ping(茹国平), Yu Rong(俞融), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height |
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Chin. Phys. B
2010 Vol.19 (9): 97304-097304
[Abstract]
(1471)
[HTML 1 KB]
[PDF 331 KB]
(808)
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97106 |
Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors |
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Chin. Phys. B
2010 Vol.19 (9): 97106-097106
[Abstract]
(1642)
[HTML 0 KB]
[PDF 486 KB]
(630)
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57303 |
Liu Hong-Xia(刘红侠), Wu Xiao-Feng(吴笑峰), Hu Shi-Gang(胡仕刚), and Shi Li-Chun(石立春) |
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Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing temperatures |
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Chin. Phys. B
2010 Vol.19 (5): 57303-057303
[Abstract]
(1403)
[HTML 1 KB]
[PDF 735 KB]
(741)
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107207 |
M. A. Yeganeh,Sh. Rahmatallahpur, A. Nozad, and R. K. Mamedov |
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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes |
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Chin. Phys. B
2010 Vol.19 (10): 107207-107207
[Abstract]
(1725)
[HTML 1 KB]
[PDF 3060 KB]
(1636)
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17203 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (1): 17203-017203
[Abstract]
(1417)
[HTML 1 KB]
[PDF 344 KB]
(973)
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1618 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts |
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Chin. Phys. B
2009 Vol.18 (4): 1618-1621
[Abstract]
(1627)
[HTML 1 KB]
[PDF 334 KB]
(781)
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
(1651)
[HTML 1 KB]
[PDF 712 KB]
(730)
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4465 |
An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) |
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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique |
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Chin. Phys. B
2009 Vol.18 (10): 4465-4469
[Abstract]
(1740)
[HTML 1 KB]
[PDF 5296 KB]
(831)
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240 |
Li Ding-Yu(李定宇), Sun Lei(孙雷), Zhang Sheng-Dong (张盛东), Wang Yi(王漪), Liu Xiao-Yan(刘晓彦), and Han Ru-Qi(韩汝琦) |
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Schottky barrier MOSFET structure with silicide source/drain on buried metal |
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Chin. Phys. B
2007 Vol.16 (1): 240-244
[Abstract]
(1939)
[HTML 1 KB]
[PDF 387 KB]
(637)
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322 |
Wang Shou-Guo (王守国), Yang Lin-An (杨林安), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Zhang Zhi-Yong (张志勇), Yan Jun-Feng (闫军锋) |
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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2003 Vol.12 (3): 322-324
[Abstract]
(1358)
[HTML 1 KB]
[PDF 205 KB]
(535)
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94 |
Wang Shou-Guo (王守国), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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Parameter extraction for a Ti/4H-SiC Schottky diode |
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Chin. Phys. B
2003 Vol.12 (1): 94-96
[Abstract]
(1523)
[HTML 1 KB]
[PDF 216 KB]
(629)
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156 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Qu Xin-Ping (屈新萍), Li Bing-Zong (李炳宗), R.L.Van Meirhaeghe, C.Detavernier, F.Cardon |
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Double threshold behaviour of I--V characteristics of CoSi2/Si Schottky contacts |
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Chin. Phys. B
2002 Vol.11 (2): 156-162
[Abstract]
(1203)
[HTML 1 KB]
[PDF 297 KB]
(539)
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