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Other articles related with "RRAM"：
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27301 |
Jing-Yao Bian(卞景垚), Ye Tao(陶冶), Zhong-Qiang Wang(王中强), Xiao-Ning Zhao(赵晓宁), Ya Lin(林亚), Hai-Yang Xu(徐海阳), and Yi-Chun Liu(刘益春) |
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Biodegradable and flexible l-carrageenan based RRAM with ultralow power consumption |
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Chin. Phys. B
2024 Vol.33 (2): 27301-027301
[Abstract]
(93)
[HTML 0 KB]
[PDF 1883 KB]
(59)
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58702 |
Xiao-Xin Xu(许晓欣), Qing Luo(罗庆), Tian-Cheng Gong(龚天成), Hang-Bing Lv(吕杭炳), Qi Liu(刘琦), and Ming Liu(刘明) |
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Resistive switching memory for high density storage and computing |
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Chin. Phys. B
2021 Vol.30 (5): 58702-058702
[Abstract]
(611)
[HTML 1 KB]
[PDF 12767 KB]
(642)
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118502 |
Yu-Jia Li(李雨佳), Hua-Qiang Wu(吴华强), Bin Gao(高滨), Qi-Lin Hua(化麒麟), Zhao Zhang(张昭), Wan-Rong Zhang(张万荣), He Qian(钱鹤) |
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Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array |
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Chin. Phys. B
2018 Vol.27 (11): 118502-118502
[Abstract]
(619)
[HTML 1 KB]
[PDF 528 KB]
(159)
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118501 |
Jing Liu(刘璟), Xiaoxin Xu(许晓欣), Chuanbing Chen(陈传兵), Tiancheng Gong(龚天成), Zhaoan Yu(余兆安), Qing Luo(罗庆), Peng Yuan(袁鹏), Danian Dong(董大年), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Analysis of tail bits generation of multilevel storage in resistive switching memory |
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Chin. Phys. B
2018 Vol.27 (11): 118501-118501
[Abstract]
(594)
[HTML 1 KB]
[PDF 1793 KB]
(192)
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87701 |
Shi-Jian Wu(吴仕剑), Fang Wang(王芳), Zhi-Chao Zhang(张志超), Yi Li(李毅), Ye-Mei Han(韩叶梅), Zheng-Chun Yang(杨正春), Jin-Shi Zhao(赵金石), Kai-Liang Zhang(张楷亮) |
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High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer |
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Chin. Phys. B
2018 Vol.27 (8): 87701-087701
[Abstract]
(785)
[HTML 1 KB]
[PDF 2296 KB]
(197)
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87305 |
Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲) |
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Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers |
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Chin. Phys. B
2017 Vol.26 (8): 87305-087305
[Abstract]
(552)
[HTML 1 KB]
[PDF 671 KB]
(354)
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107302 |
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮) |
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Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer |
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Chin. Phys. B
2016 Vol.25 (10): 107302-107302
[Abstract]
(624)
[HTML 1 KB]
[PDF 1458 KB]
(280)
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56501 |
Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array |
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Chin. Phys. B
2016 Vol.25 (5): 56501-056501
[Abstract]
(666)
[HTML 1 KB]
[PDF 1729 KB]
(396)
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58501 |
Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤) |
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Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices |
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Chin. Phys. B
2015 Vol.24 (5): 58501-058501
[Abstract]
(732)
[HTML 1 KB]
[PDF 529 KB]
(313)
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
[Abstract]
(593)
[HTML 1 KB]
[PDF 1524 KB]
(817)
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107306 |
Deng Ning (邓宁), Pang Hua (庞华), Wu Wei (吴畏) |
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Effects of different dopants on switching behavior of HfO2-based resistive random access memory |
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Chin. Phys. B
2014 Vol.23 (10): 107306-107306
[Abstract]
(571)
[HTML 1 KB]
[PDF 953 KB]
(2155)
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27702 |
Zhang Fei (张飞), Lin Yuan-Bin (林远彬), Wu Hao (吴昊), Miao Qing (苗青), Gong Ji-Jun (巩纪军), Chen Ji-Pei (陈继培), Wu Su-Juan (吴素娟), Zeng Min (曾敏), Gao Xing-Sen (高兴森), Liu Jun-Ming (刘俊明) |
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Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films |
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Chin. Phys. B
2014 Vol.23 (2): 27702-027702
[Abstract]
(474)
[HTML 1 KB]
[PDF 1223 KB]
(806)
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37201 |
Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) |
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Analysis of resistive switching behaviors of vanadium oxide thin film |
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Chin. Phys. B
2013 Vol.22 (3): 37201-037201
[Abstract]
(831)
[HTML 0 KB]
[PDF 689 KB]
(1421)
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97703 |
Xing Zhong-Wen(邢钟文), X. Chen, N. J. Wu, and A. Ignatiev |
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Bipolar resistive switching in Cr-doped TiOx thin films |
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Chin. Phys. B
2011 Vol.20 (9): 97703-097703
[Abstract]
(1423)
[HTML 1 KB]
[PDF 504 KB]
(836)
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37304 |
Meng Yang(孟洋), Zhang Pei-Jian(张培健), Liu Zi-Yu(刘紫玉), Liao Zhao-Liang(廖昭亮), Pan Xin-Yu(潘新宇), Liang Xue-Jin(梁学锦), Zhao Hong-Wu(赵宏武), and Chen Dong-Min(陈东敏) |
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Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches |
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Chin. Phys. B
2010 Vol.19 (3): 37304-037304
[Abstract]
(1914)
[HTML 1 KB]
[PDF 707 KB]
(2083)
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