Asymmetric resistive switching processes were observed in W:AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under -1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carried out to understand these significant differences in switching time. A redox reaction model in the W:AlOx/WOy device structure is proposed to explain this switching time difference.
Wu Hua-Qiang (吴华强), Wu Ming-Hao (吴明昊), Li Xin-Yi (李辛毅), Bai Yue (白越), Deng Ning (邓宁), Yu Zhi-Ping (余志平), Qian He (钱鹤) Asymmetric resistive switching processes in W:AlOx/WOy bilayer devices 2015 Chin. Phys. B 24 058501
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