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Effects of different dopants on switching behavior of HfO2-based resistive random access memory |
Deng Ning (邓宁)a b, Pang Hua (庞华)a b, Wu Wei (吴畏)a b |
a Institute of Microelectronics, Tsinghua University, Beijing 100084, China; b Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, China |
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Abstract In this study the effects of doping atoms (Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory (RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy (Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices, and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.
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Received: 04 July 2014
Revised: 04 August 2014
Accepted manuscript online:
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PACS:
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73.40.Ns
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(Metal-nonmetal contacts)
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85.35.-p
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(Nanoelectronic devices)
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85.90.+h
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(Other topics in electronic and magnetic devices and microelectronics)
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Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA010403). |
Corresponding Authors:
Deng Ning
E-mail: ningdeng@tsinghua.edu.cn
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About author: 73.40.Ns; 85.35.-p; 85.90.+h |
Cite this article:
Deng Ning (邓宁), Pang Hua (庞华), Wu Wei (吴畏) Effects of different dopants on switching behavior of HfO2-based resistive random access memory 2014 Chin. Phys. B 23 107306
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