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Chin. Phys. B, 2026, Vol. 35(4): 043303    DOI: 10.1088/1674-1056/ae4465
SPECIAL TOPIC — Ultrafast physics in atomic, molecular and optical systems Prev   Next  

Molecular orbital effect in above-threshold ionization of vinyl bromide induced by strong laser fields

Qi Chen(陈淇), Yang Liu(刘洋), Wei Yang(杨威), Di Liu(刘迪), Hang Lv(吕航)†, Bing Yan(闫冰), and Haifeng Xu(徐海峰)‡
Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
Abstract  Ionization is a fundamental process that may induce a variety of highly nonlinear physical phenomena in strong femtosecond laser fields. Compared to that of atoms, strong-field ionization (SFI) of polyatomic molecules is far from being understood because of their diverse geometric and orbital structures. In this study, we experimentally investigate SFI of the vinyl bromide ($\mathrm{C_2 H_3 Br}$) molecule in near ultraviolet and near-infrared strong laser fields employing the electron velocity map imaging (VMI) method. The distinct above-threshold ionization (ATI) structure of the molecule is clearly observed in both strong laser fields. The electron kinetic energy as well as the angular distributions is derived from the electron VMI measurements, and their dependence on the laser intensity is investigated and discussed. Analysis reveals that owing to the small energy difference between the low-lying electronic orbitals of the $\mathrm{C_2 H_3 Br}$ molecule, multiple orbital effect plays a pivotal role in the SFI of the molecule. The present study adds our knowledge on SFI and ATI of the $\mathrm{C_2 H_3 Br}$ molecule, and sheds some light on the interaction of polyatomic molecules with ultrafast strong laser fields.
Keywords:  above threshold ionization      strong laser field      molecular orbital effect      vinyl bromide  
Received:  03 February 2026      Revised:  03 February 2026      Accepted manuscript online:  11 February 2026
PACS:  33.80.Eh (Autoionization, photoionization, and photodetachment)  
Fund: This work was supported by the National Natural Science Foundation of China (Grant Nos. 12574311, 12174148, and 12274178) and the Natural Science Foundation of Jilin Province, China (Grant No. 20240101322JC).
Corresponding Authors:  Hang Lv, Haifeng Xu     E-mail:  lvhang0811@jlu.edu.cn;xuhf@jlu.edu.cn

Cite this article: 

Qi Chen(陈淇), Yang Liu(刘洋), Wei Yang(杨威), Di Liu(刘迪), Hang Lv(吕航), Bing Yan(闫冰), and Haifeng Xu(徐海峰) Molecular orbital effect in above-threshold ionization of vinyl bromide induced by strong laser fields 2026 Chin. Phys. B 35 043303

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