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Intensity enhancement of Raman active and forbidden modes induced by naturally occurred hot spot at GaAs edge |
| Tao Liu(刘涛)1,2, Miao-Ling Lin(林妙玲)1,2, Da Meng(孟达)1,2, Xin Cong(从鑫)1,2, Qiang Kan(阚强)2,3, Jiang-Bin Wu(吴江滨)1,2, and Ping-Heng Tan(谭平恒)1,2,† |
1 State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract Edge structures are ubiquitous in the processing and fabrication of various optoelectronic devices. Novel physical properties and enhanced light-matter interactions are anticipated to occur at crystal edges due to the broken spatial translational symmetry. However, the intensity of first-order Raman scattering at crystal edges has been rarely explored, although the mechanical stress and edge characteristics have been thoroughly studied by the Raman peak shift and the spectral features of the edge-related Raman modes. Here, by taking GaAs crystal with a well-defined edge as an example, we reveal the intensity enhancement of Raman-active modes and the emergence of Raman-forbidden modes under specific polarization configurations at the edge. This is attributed to the presence of a hot spot at the edge due to the redistributed electromagnetic fields and electromagnetic wave propagations of incident laser and Raman signal near the edge, which are confirmed by the finite-difference time-domain simulations. Spatially-resolved Raman intensities of both Raman-active and Raman-forbidden modes near the edge are calculated based on the redistributed electromagnetic fields, which quantitatively reproduce the corresponding experimental results. These findings offer new insights into the intensity enhancement of Raman scattering at crystal edges and present a new avenue to manipulate light-matter interactions of crystal by manufacturing various types of edges and to characterize the edge structures in photonic and optoelectronic devices.
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Received: 16 October 2024
Revised: 14 December 2024
Accepted manuscript online: 17 December 2024
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PACS:
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78.30.-j
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(Infrared and Raman spectra)
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13.88.+e
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(Polarization in interactions and scattering)
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42.25.Gy
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(Edge and boundary effects; reflection and refraction)
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47.20.Ky
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(Nonlinearity, bifurcation, and symmetry breaking)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2023YFA1407000), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB0460000), the National Natural Science Foundation of China (Grant Nos. 12322401, 12127807, and 12393832), CAS Key Research Program of Frontier Sciences (Grant No. ZDBS-LY-SLH004), Beijing Nova Program (Grant No. 20230484301), Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2023125), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-026). |
Corresponding Authors:
Ping-Heng Tan
E-mail: phtan@semi.ac.cn
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Cite this article:
Tao Liu(刘涛), Miao-Ling Lin(林妙玲), Da Meng(孟达), Xin Cong(从鑫), Qiang Kan(阚强), Jiang-Bin Wu(吴江滨), and Ping-Heng Tan(谭平恒) Intensity enhancement of Raman active and forbidden modes induced by naturally occurred hot spot at GaAs edge 2025 Chin. Phys. B 34 017801
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