Effect of seed layers on the static and dynamic magnetic properties of CoIr films with negative effective magnetocrystalline anisotropy
Tianyong Ma(马天勇)1, Sha Zhang(张莎)1, Chenhu Zhang(张晨虎)2, Zhiwei Li(李志伟)2, Tao Wang(王涛)2,†, and Fashen Li(李发伸)2
1 The Key Laboratory of Physics and Photoelectric Information Functional Materials, North Minzu University, Yinchuan 750021, China; 2 Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
Abstract The c-axis oriented hcp-Co81Ir19 magnetic films were prepared on different seed layers (Ni, Cu, Ir, Pt, Au, and No seed). We systematically investigated the impact that surface-free energy and strain energy have on the orientation and defects and/or internal stress of the grains by increasing the lattice mismatch ratio. Moreover, the initial permeability and the natural resonance frequency were discussed in great detail using a comparison between calculated values and experimental values. We found that the almost unchanged 4πMs and μi are not affected, while the changed Hc, intrinsic Kgrain, and fr are strongly dependent on the seed layer and seed layer material. Moreover, the extracted damping constant is sensitive to the defects and/or internal stress and orientation of the grains. Therefore, the soft magnetic properties and microwave properties are adjusted and optimized by seed layers with different materials.
(Magnetic properties of thin films, surfaces, and interfaces)
Fund: Project supported by the Natural Science Foundation of Ningxia in China (Grant No.2022AAC03288) and the Ningxia New Solid Electronic Materials and Devices Research and Development Innovation Team (Grant No.2020CXTDLX12).
Corresponding Authors:
Tao Wang
E-mail: wtao@lzu.edu.cn
Cite this article:
Tianyong Ma(马天勇), Sha Zhang(张莎), Chenhu Zhang(张晨虎), Zhiwei Li(李志伟), Tao Wang(王涛), and Fashen Li(李发伸) Effect of seed layers on the static and dynamic magnetic properties of CoIr films with negative effective magnetocrystalline anisotropy 2023 Chin. Phys. B 32 127503
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