| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin torque oscillator based on magnetic tunnel junction with MgO cap layer for radio-frequency-oriented neuromorphic computing |
| Huayao Tu(涂华垚)1,2, Yanxiang Luo(雒雁翔)1,2, Kexin Zeng(曾柯心)1,2,5, Yuxuan Wu(吴宇轩)1,2, Like Zhang(张黎可)3,†, Baoshun Zhang(张宝顺)2, and Zhongming Zeng(曾中明)1,2,4,‡ |
1 School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;
2 Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
3 School of Electronics and Information Engineering, Wuxi University, Wuxi 214105, China;
4 Nanchang(SINANONC) Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China;
5 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China |
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Abstract Recently, it has been proposed that spin torque oscillators (STOs) and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals, which could lower latency and power consumption greatly. However, one critical challenge is to make the microwave emission frequency of the STO stay constant with a varying input current. In this work, we study the microwave emission characteristics of STOs based on magnetic tunnel junction with MgO cap layer. By applying a small magnetic field, we realize the invariability of the microwave emission frequency of the STO, making it qualified to act as artificial neuron. Furthermore, we have simulated an artificial neural network using STO neuron to recognize the handwritten digits in the Mixed National Institute of Standards and Technology database, and obtained a high accuracy of 92.28%. Our work paves the way for the development of radio-frequency-oriented neuromorphic computing systems.
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Received: 01 November 2022
Revised: 12 January 2023
Accepted manuscript online: 18 January 2023
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PACS:
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75.76.+j
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(Spin transport effects)
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72.25.-b
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(Spin polarized transport)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11974379 and 12204357), K. C. Wong Education Foundation (Grant No. GJTD-2019-14), Jiangxi Province "Double Thousand Plan" (Grant No. S2019CQKJ2638), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 22KB140017), and Wuxi University Research Start-up Fund for Introduced Talents (Grant No. 2022r006). |
Corresponding Authors:
Like Zhang, Zhongming Zeng
E-mail: lkzhang@cwxu.edu.cn;zmzeng2012@sinano.ac.cn
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Cite this article:
Huayao Tu(涂华垚), Yanxiang Luo(雒雁翔), Kexin Zeng(曾柯心), Yuxuan Wu(吴宇轩), Like Zhang(张黎可), Baoshun Zhang(张宝顺), and Zhongming Zeng(曾中明) Spin torque oscillator based on magnetic tunnel junction with MgO cap layer for radio-frequency-oriented neuromorphic computing 2023 Chin. Phys. B 32 107504
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