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Chinese Physics, 2003, Vol. 12(6): 665-668    DOI: 10.1088/1009-1963/12/6/317
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions

Zhu Tao (朱涛)ab, Zhan Wen-Shan (詹文山)a, Shen Feng (沈峰)c, Zhang Ze (张泽)c, X. H. Xiangb, G. Landryb, John Q. Xiaob
a State Key Laboratory for Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA; c Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, $l_{\rm tc}$, can be obtained to be about 0.8 nm for CoFe materials.
Keywords:  tunnelling magnetoresistance      magnetic tunnel junctions  
Received:  08 January 2003      Revised:  27 January 2003      Accepted manuscript online: 
PACS:  75.47.Pq (Other materials)  
  75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50171078).

Cite this article: 

Zhu Tao (朱涛), Zhan Wen-Shan (詹文山), Shen Feng (沈峰), Zhang Ze (张泽), X. H. Xiang, G. Landry, John Q. Xiao Bulk-like contribution to tunnel magnetoresistance in magnetic tunnel junctions 2003 Chinese Physics 12 665

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