| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process |
| Hao-Yan Liu(刘昊炎)1,2, Yong-Liang Li(李永亮)1,2,†, and Wen-Wu Wang(王文武)1,2 |
1 University of Chinese Academy of Sciences(UCAS), Beijing 100049, China;
2 Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract A narrowed Si0.7Ge0.3 channel fin field-effect transistor (FinFET) device is demonstrated in detail by using an accurate cyclic wet treatment process. The Si0.7Ge0.3 fin/per side of 0.63 nm in thickness can be accurately removed in each cycle by utilizing a self-limited oxidation with 40% HNO3 solution in 40 s and oxidation removal can be achieved with 1% HF solution in 10 s. As a result, after the dummy gate removal, the fin width of Si0.7Ge0.3 can be narrowed from 20 nm to 8 nm by utilizing 10 cycles of this wet treatment process. Compared with the conventional Si0.7Ge0.3 FinFET under a similar process, the narrowed Si0.7Ge0.3 channel FinFET can realize a strong gate control capability by using this newly developed wet treatment process, because its subthreshold slope can be reduced by 24%, improving from 87 mV/dec to 64 mV/dec.
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Received: 29 October 2022
Revised: 04 December 2022
Accepted manuscript online: 21 December 2022
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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| Fund: Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4202078). |
Corresponding Authors:
Yong-Liang Li
E-mail: liyongliang@ime.ac.cn
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Cite this article:
Hao-Yan Liu(刘昊炎), Yong-Liang Li(李永亮), and Wen-Wu Wang(王文武) Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process 2023 Chin. Phys. B 32 077302
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