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Three-dimensional Monte Carlo simulation of bulk fin field effect transistor |
| Wang Jun-Cheng (王骏成), Du Gang (杜刚), Wei Kang-Liang (魏康亮), Zhang Xing (张兴), Liu Xiao-Yan (刘晓彦 ) |
| Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract In this paper, we investigate the performance of bulk fin field effect transistor (FinFET) through a three-dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
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Received: 07 March 2012
Revised: 23 April 2012
Accepted manuscript online:
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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71.15.Pd
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(Molecular dynamics calculations (Car-Parrinello) and other numerical simulations)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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| Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604). |
Corresponding Authors:
Du Gang
E-mail: gangdu@pku.edu.cn
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Cite this article:
Wang Jun-Cheng (王骏成), Du Gang (杜刚), Wei Kang-Liang (魏康亮), Zhang Xing (张兴), Liu Xiao-Yan (刘晓彦 ) Three-dimensional Monte Carlo simulation of bulk fin field effect transistor 2012 Chin. Phys. B 21 117308
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