1 School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China; 2 Shandong Provincial Engineering and Technical Center of Light Manipulation and Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China; 3 The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China; 4 Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Abstract Light emission by inelastic tunneling (LEIT) from a metal-insulator-metal tunnel junction is an ultrafast emission process. It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits. However, existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques, which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up. Here in this work, we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier. For the first time, we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions. Uniform electroluminescence is observed over the entire active region, with the emission spectrum shaped by metallic grating plasmons. The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier. The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12004222 and 91850207), the National Key Research and Development Program of China (Grant Nos. 2017YFA0303504 and 2017YFA0205800), the Fundamental Research Funds for the Central Universities, China, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), and the Postdoctoral Science Foundation of China (Grant No. 2020M682223).
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