ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS |
Prev
Next
|
|
|
Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons |
Xiao-Ming Jin(金晓明), Wei Chen(陈伟), Jun-Lin Li(李俊霖), Chao Qi(齐超), Xiao-Qiang Guo(郭晓强), Rui-Bin Li(李瑞宾), Yan Liu(刘岩) |
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China |
|
|
Abstract This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation, reactor, and monoenergetic neutrons. The SEU effect is investigated as a function of incident neutron energy spectrum, technology node, byte pattern and neutron fluence rate. The experimental data show that the SEU effect mainly depends on the incident neutron spectrum and the technology node, and the SEU sensitivity induced by low-energy neutrons significantly increases with the technology downscaling. Monte-Carlo simulations of nuclear interactions with device architecture are utilized for comparing with the experimental results. This simulation approach allows us to investigate the key parameters of the SEU sensitivity, which are determined by the technology node and supply voltage. The simulation shows that the high-energy neutrons have more nuclear reaction channels to generate more secondary particles which lead to the significant enhancement of the SEU cross-sections, and thus revealing the physical mechanism for SEU sensitivity to the incident neutron spectrum.
|
Received: 21 June 2019
Revised: 31 July 2019
Accepted manuscript online:
|
PACS:
|
42.88.+h
|
(Environmental and radiation effects on optical elements, devices, and systems)
|
|
61.80.Hg
|
(Neutron radiation effects)
|
|
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
|
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043) and the Foundation of State Key Laboratory of China (Grant Nos. SKLIPR1801Z and 6142802180304). |
Corresponding Authors:
Xiao-Ming Jin
E-mail: jinxiaoming_2007@tsinghua.org.cn
|
Cite this article:
Xiao-Ming Jin(金晓明), Wei Chen(陈伟), Jun-Lin Li(李俊霖), Chao Qi(齐超), Xiao-Qiang Guo(郭晓强), Rui-Bin Li(李瑞宾), Yan Liu(刘岩) Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons 2019 Chin. Phys. B 28 104212
|
[1] |
Miller F, Weulersse C, Carriere T, Guibbaud N, Morand S and Gaillard R 2013 IEEE Trans. Nucl. Sci. 60 2789
|
[2] |
Hirokawa S, Harada R, Hashimoto M and Onoye T 2015 IEEE Trans. Nucl. Sci. 62 420
|
[3] |
Lambert D, Desnoyers F, Thouvenot D, Riant O, Galinat J, Azais B and Colladant T 2017 IEEE Radiation Effects Data Workshop (REDW)
|
[4] |
Clemente J A, Hubert G, Fraire J, Franco F J, Villa F, Rey S, Baylac M, Puchner H, Mecha H and Velazco R 2018 IEEE Trans. Nucl. Sci. 65 1858
|
[5] |
Clemente J A, Hubert G, Franco F J, Villa F, Baylac M, Mecha H, Puchner H and Velazco R 2017 IEEE Trans. Nucl. Sci. 64 2188
|
[6] |
Armani J M, Simon G and Poirot P 2004 IEEE Trans. Nucl. Sci. 51 2811
|
[7] |
Neale A and Sachdev M 2016 IEEE Trans. Nucl. Sci. 63 1912
|
[8] |
Weulersse C, Guibbaud N, Beltrando A, Galinat J, Beltrando C, Miller F, Trochet P and Alexandrescu D 2017 IEEE Trans. Nucl. Sci. 64 2268
|
[9] |
Lambert D, Baggio J, Cavrois V F, Flament O, Saigné F, Sagnes B, Buard N and Carriére T 2004 IEEE Trans. Nucl. Sci. 51 3435
|
[10] |
Lambert D, Baggio J, Hubert G, Paillet P, Girard S, Cavrois V F, Flament O, Saigné F, Boch J, Sagnes B, Buard N and Carriére T 2006 IEEE Trans. Nucl. Sci. 53 1890
|
[11] |
Lambert D, Baggio J, Hubert G, Cavrois V F, Flament O, Saigné F, Wrobel F, Duarte H, Boch J, Sagnes B, Buard N and Carriére T 2005 IEEE Trans. Nucl. Sci. 52 2332
|
[12] |
Baggio J, Lambert D, Cavrois V F, Paillet P, Marcandella C and Duhamel O 2007 IEEE Trans. Nucl. Sci. 54 2149
|
[13] |
Flament O, Baggio J, D'hose C, Gasiot G and Leray J L 2004 IEEE Trans. Nucl. Sci. 51 2908
|
[14] |
Zhang L Y, Jing H T, Tang J Y and Wang X Q 2016 Radiation Physics and Chemistry 127 133
|
[15] |
Chen L X, Tang X B, Jiang X B, Chen D and Zhao Z M 2016 Radiation Physics and Chemistry 56 137
|
[16] |
Caswell R S, Coyne J J and Randolph M L 1980 Radiation Research 83 217
|
[17] |
2007 Standard practice for characterizing neutron energy fluence spectra in terms of an equivalent mono-energetic neutron fluence for radiation-hardness testing of electronics (Annual book of ASTM Standards E 722-04)
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|