Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

doi:10.1088/1674-1056/28/3/037302

Abstract

The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigated. The microstructures indicate that a better surface morphology and an intact contact interface are formed after laser annealing. None of the TiN alloy spikes are formed at the interface of the laser annealing sample. The experimental results show that the current transport mechanism through the ohmic contact after laser annealing is different from the conventional spike mechanism, and it is dominated by thermionic field emission.

Keywords: gallium nitride ohmic contacts laser annealing current transport mechanism

Received: 20 November 2018
Revised: 15 January 2019
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	81.40.Rs	(Electrical and magnetic properties related to treatment conditions)
	68.37.Lp	(Transmission electron microscopy (TEM))
	68.37.Ps	(Atomic force microscopy (AFM))

Fund:

Projects supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187) and the National Key Research and Development Program of China (Grant No. 2017YFB0402804).

Corresponding Authors: Gang Xie
E-mail: xielyz@zju.edu.cn

Cite this article:

Mingchen Hou(侯明辰), Gang Xie(谢刚), Kuang Sheng(盛况) Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing 2019 Chin. Phys. B 28 037302

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Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing

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