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Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ |
Mao-Sen Yang(杨茂森)1, Liang Fang(方粮)1, Ya-Qing Chi(池雅庆)2 |
1 State Key Laboratory of High-Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China;
2 Institute of Microelectronics, College of Computer, National University of Defense Technology, Changsha 410073, China |
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Abstract We investigate the dependence of the switching process on the perpendicular magnetic anisotropy (PMA) constant in perpendicular spin transfer torque magnetic tunnel junctions (P-MTJs) using micromagnetic simulations. It is found that the final stable states of the magnetization distribution of the free layer after switching can be divided into three different states based on different PMA constants:vortex, uniform, and steady. Different magnetic states can be attributed to a trade-off among demagnetization, exchange, and PMA energies. The generation of the vortex state is also related to the non-uniform stray field from the polarizer, and the final stable magnetization is sensitive to the PMA constant. The vortex and uniform states have different switching processes, and the switching time of the vortex state is longer than that of the uniform state due to hindrance by the vortex.
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Received: 01 May 2018
Revised: 07 June 2018
Accepted manuscript online:
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PACS:
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85.75.Dd
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(Magnetic memory using magnetic tunnel junctions)
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85.70.Ay
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(Magnetic device characterization, design, and modeling)
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75.78.Cd
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(Micromagnetic simulations ?)
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74.25.Ha
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(Magnetic properties including vortex structures and related phenomena)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61332003) and the Natural Science Foundation of Hunan Province, China (Grant No. 2015JJ3024). |
Corresponding Authors:
Liang Fang
E-mail: lfang@nudt.edu.cn
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Cite this article:
Mao-Sen Yang(杨茂森), Liang Fang(方粮), Ya-Qing Chi(池雅庆) Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ 2018 Chin. Phys. B 27 098504
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