The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

doi:10.1088/1674-1056/26/11/117101

Abstract

P-type ZnO is crucial for the realization of ZnO-based homojunction ultraviolet optoelectronic devices. The problem associated with the preparation of stable p-type ZnO with high hole density still hinders device applications. In this paper, we introduce an alternative route to stabilizing N in the oxidation process, the thermal stability of p-ZnO is significantly improved. Finally, we discuss the limitations of the alternative doping method and provide some prospective outlook of the method.

Keywords: wide band gap semiconductor p-ZnO Zn₃N₂ thermal oxidation

Received: 04 May 2017
Revised: 15 June 2017
Accepted manuscript online:

PACS:	71.55.Ht	(Other nonmetals)
	72.80.Jc	(Other crystalline inorganic semiconductors)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11474076).

Corresponding Authors: Yi-Chun Liu
E-mail: ycliu@nenu.edu.cn

Cite this article:

Bing-Sheng Li(李炳生), Zhi-Yan Xiao(肖芝燕), Jian-Gang Ma(马剑刚), Yi-Chun Liu(刘益春) The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors 2017 Chin. Phys. B 26 117101

[1]	Ozgur U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 041301
[2]	Kozuka Y, Tsukazaki A and Kawasaki M 2014 Appl. Phys. Rev. 1 011303
[3]	Huang M H, Mao S, Feick H, Yan H Q, Wu Y Y, Kind H, Weber E, Russo R and Yang P D 2005 Science 292 1897
[4]	Bagnall D M, Chen Y F, Zhu Z, Yao T, Koyama S, Shen M Y and Goto T 1997 Appl. Phys. Lett. 70 2230
[5]	Zu, P, Tang Z K, Wang G K L, Kawasaki M, Ohotmo A, Koinuma H and Segawa H 1997 Soli. State Com. 103 459
[6]	Wiersma D S 2008 Nat. Phys. 4 359
[7]	Cao H, Zhao Y G, Ho S T, Seelig E W, Wang Q H and Chang R P H 1999 Phys. Rev. Lett. 82 2278
[8]	Que M L, Wang X D, Peng Y Y and Pan C F 2017 Chin. Phys. B 26 067301
[9]	Chu S, Wang G P, Zhou W H, Lin Y Q, Chernyak L, Zhao J Z, Kong J Y, Li L, Ren J J and Liu J L 2011 Nat. Nano. 6 506
[10]	Lu J F, Shi Z L, Wang Y Y, Lin Y, Zhu, Q X, Tian Z S, Dai J, Wang S F and Xu C X 2016 Sci. Rep. 6 25645
[11]	Ren X L, Zhang X H, Liu N S, Wen L, Ding L W, Ma Z W, Su J, Li LY, Han J B and Gao Y H 2015 Adv. Fun. Mater. 25 2182
[12]	Lu Y J, Li H F, Shan C X, Li B H, Shen D Z, Zhang L G and Yu S F 2014 Opt. Exp. 22 17524
[13]	Zhang X M, Lu M Y, Zhang Y, Chen L and Wang Z L 2009 Adv. Mater. 21 2767
[14]	Zhang Y T, Xia X C, Wu B, Shi Z F, Yang F, Yang X T, Zhang B L and Du G T 2014 Chin. Phys. Lett. 31 058101
[15]	Przezdziecka E, Stachowicz M, Chusnutdinow S, Jakiela R and Kozanecki A 2015 Appl. Phys. Lett. 106 062106
[16]	Klingshirn C, Fallert J, Zhou H, Sartor J, Thiele J, Thiele C, Maier-Flaig F, Schneider D and Kalt H 2010 Phys. Sta. Soli. B 247 1424
[17]	Özgürü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
[18]	Tang Z K, Wong G K L, Yu P, Kawasaki M, Ohtomo A, Koinuma H and Segawa Y 1998 Appl. Phys. Lett. 72 3270
[19]	Chen Y F, Bagnall D M, Koh H J, Park K T, Hiraga K, Zhu Z Q and Yao T 1998 J. Appl. Phys. 84 3912
[20]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A and Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[21]	Nie J C, Yang J Y, Piao Y, Li H, Sun Y, Xue Q M, Xiong C M, Dou R F and Tu Q Y 2008 Appl. Phys. Lett. 93 173104
[22]	Tsukazaki A, Ohtomo A, Onuma T, Ohtami M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
[23]	Jiao S J, Zhang Z Z, Lu Y M, Shen D Z, Yao B, Zhang J Y, Li B H, Zhao D X, Fan X W and Tang Z K 2006 Appl. Phys. Lett. 88 031911
[24]	Look D C, Claflin B, Alivov Y I and Park S J 2004 Phys. Stat. Sol.(a) 201 2203
[25]	Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S and Youn C J 2006 Appl. Phys. Lett. 88 241108
[26]	Lu Y J, Shan C X, Zhou Z X, Wang Y L, Li B H, Qin J M, Ma H, Jia X P, Chen Z H and Shen D Z 2015 Optica 2 558
[27]	Nakamura T, Firdaus K and Adachi S 2012 Phys. Rev. B 86 205103
[28]	Nakamura T, Fujiwara H, Niyuki R, Sasaki K, Ishikawa Y, Koshizaki N, Tsuji T and Adachi S 2014 New J. Phys. 16 093054
[29]	Li Y P, Wang C X, Jin L, Ma X Y and Yang D R 2013 J. Appl. Phys. 113 213103
[30]	Fujiwara H, Niyuki R, Ishikawa Y, Koshizaki N, Tsuji T and Sasaki K 2013 Appl. Phys. Lett. 102 061110
[31]	Yu S F, Yuen C, Lau S P, Park W I and Yi G C 2004 Appl. Phys. Lett. 84 3241
[32]	Klingshirn C, Hauschild R, Fallert J and Kalt H 2007 Phys. Rev. B 75 115203
[33]	Lai Y Y, Chou Y H, Lan Y P, Lu T C, Wang S C and Yamamoto Y 2016 Sci. Rep. 6 20581
[34]	Bagnall D M, Chen Y F, Zhu Z, Yao T, Shen M Y and Goto T 1998 Appl. Phys. Lett. 73 1038
[35]	Gadallah A-S, Nomenyo K, Couteau C, Rogers D J and Lerondel G 2013 Appl. Phys. Lett. 102 171105
[36]	Lai Y Y, Chen J W, Chang T C, Chou Y H and Lu T C 2015 Appl. Phys. Lett. 106 131106
[37]	Wang Y F, Liao L M, Hu T, Luo S, Wu L, Wang J, Zhang Z, Xie W, Sun L X, Kavokin A V, Shen X C and Chen Z H 2017 Phys. Rev. Lett. 118 063602
[38]	Xie W, Dong H, Zhang S, Sun L, Zhou W, Ling Y, Lu J, Shen X C and Chen Z H 2012 Phys. Rev. Lett. 108 166401
[39]	Li F, Orosz L, Kamoun O, Bouchoule S, Brimont C, Disseix P, Guillet T, Lafosse X, Leroux M, Leymarie J, Mexis M, Mihailovic M, Patriarche G, Re'veret F, Solnyshkov D, Zuniga-Perez J and Malpuech G 2013 Phys. Rev. Lett. 110 196406
[40]	Czekalla C, Sturm C, Schmidt-Grund R, Cao B, Lorenz M and Grundmann M 2008 Appl. Phys. Lett. 92 241102
[41]	Wang Y Y, Xu C X, Jiang M M, Li J T, Dai J, Lu J F and Li P L 2016 Nanoscale 8 16631
[42]	Chen R, Ling B, Sun X W and Sun H D 2011 Adv. Mater. 23 2199
[43]	Zhang Y, Yan X Q, Yang Y, Huang Y H, Liao Q L and Qi J J 2012 Adv. Mater. 24 4647
[44]	Li P F, Liao Q L, Yang S Z, Bai X D, Huang Y H, Yan X Q, Zhang Z, Liu S, Lin P, Kang Z and Zhang Y 2014 Nano Lett. 14 480
[45]	Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A and Kawasaki M 2010 Appl. Phys. Lett. 97 013501
[46]	Shen D Z, Mei Z X, Liang H L, Du X L, Ye J D, Gg S L, Wu Y X, Xu C X, Zhu G Y, Dai J, Chen M M, Ji X, Tang Z K, Shan C X, Zhang B L, Du G T and Zhang Z Z 2014 Chin. J. Lum. 35 1
[47]	Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2005 Progress in Materials Science 50 293
[48]	Coughlan C, Schulz S, Caro M A and O'Reilly E P 2015 Phys. Sta. Soli. B 252 879
[49]	Vurgaftmana I, Meyer J R and Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[50]	Ryu Y R, Lee T S, Lubguban J A, Corman A B, White H W, Leem J H, Han M S, Park Y S, Youn C J and Kim W J 2006 Appl. Phys. Lett. 88 052103
[51]	Ju Z G, Shan C X, Jiang D Y, Zhang J Y, Yao B, Zhao D X, Shen D Z and Fan X W 2008 Appl. Phys. Lett. 93 173505
[52]	Hou Y N, Mei Z X, Liang H L, Gu C Z and Du X L 2014 Appl. Phys. Lett. 105 133510
[53]	Kalusniak S, Sadofev S, Puls J and Henneberger F 2009 Laser& Photon Rev. 3 233
[54]	Yang W F, Liu B, Chen R, Wong L M, Wang S J and Sun H D 2010 Appl. Phys. Lett. 97 061911
[55]	Zhao K L, Chen G P, Li B S and Shen A D 2014 Appl. Phys. Lett. 104 212104
[56]	Bellotti E, Driscoll K, Moustakas T D and Paiella R 2009 J. Appl. Phys. 105 113103
[57]	Su L X, Zhu Y, Yong D, Chen M, Ji X, Su Y, Gui X, Pan B, Xiang R and Tang Z 2014 ACS Appl. Mater. Interfaces 6 14152
[58]	Reynolds J G, Reynolds C L, Mohanta J A, Muth J F, Rowe J E, Everitt H O and Aspnes D E 2013 Appl. Phys. Lett. 102 152114
[59]	Pandey S K, Pandey S K, Awasthi V, Gupta M, Deshpande U P and Mukherjee S 2013 Appl. Phys. Lett. 103 072109
[60]	Lee J S, Cha S N, Kim J M, Nam H W, Lee S H, Ko W B, Wang K L, Park J G and Hong J P 2011 Adv. Mater 23 4183
[61]	Chen F G, Ye Z Z, Xu W Z, Zhao B H, Zhu L P and Lv J G 2005 J. Crys. Growth 281 458
[62]	Sui Y R, Yao B, Xiao L, Yang L L, Liu Y Q, Li F X, Gao M, Xing G Z, Li S and Yang J H 2012 Thin Solid Films 520 5914
[63]	Kim K K, Kim H S, Hwang D K, Lim J H and Park S J 2003 Appl. Phys. Lett. 83 63
[64]	Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
[65]	Heo Y W, Kwon Y W, Li Y, Pearton S J and Norton D P 2004 Appl. Phys. Lett. 84 3474
[66]	Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
[67]	Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y and Zhang C L 2006 Appl. Phys. Lett. 88 092101
[68]	Xu W Z, Ye Z Z, Zeng Y J, Zhu L P, Zhao B H, Jiang L, Lu J G, He H P and Zhang S B 2006 Appl. Phys. Lett. 88 173506
[69]	Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S and Park Y S 2006 Appl. Phys. Lett. 88 241108
[70]	Wei Z P, Lu Y M, Shen D Z, Zhang Z Z, Yao B, Li B H, Zhang J Y, Zhao D X, Fan X W and Tang Z K 2007 Appl. Phys. Lett. 90 042113
[71]	Chu S, Olmedo M, Yang Z, Kong J and Liu J 2008 Appl. Phys. Lett. 93 181106
[72]	Choi Y S, Kang J W, Hwang D K and Park S J 2010 IEEE Trans. Elect. Dev. 57 26
[73]	Liu J S, Shan C X, Li B H, Zhang Z Z, Liu K W and Shen D Z 2013 Opt. Lett. 38 2113
[74]	Li B S, Liu Y C, Zhi Z Z, Shen D Z, Lu Y M, Zhang J Y, Fan X W, Mu R X and Henderson D O 2003 J. Mater. Res. 18 8
[75]	Wang Y F, Song D Y, Li L, Li B S, Shen A and Sui Y 2016 Phys. Stat. Sol. C 13 585
[76]	Song D Y, Li L, Li B. S, Sui Y and Shen A D 2016 AIP Adv. 6 065016
[77]	Wang L G and Zunger A 2003 Phys. Rev. Lett. 90 256401
[78]	Nian Q, Callahan M, Saei M, Look D, Efstathiadis H, Bailey J and Cheng G J 2015 Sci. Rep. 5 15517
[79]	Look D C, Leedy K D, Thomson D B and Wang B 2014 J. Appl. Phys. 115 012002
[80]	Sun H, Jen S U, Chen S C, Ye S S and Wang X 2017 J. Phys. D:Appl. Phys. 50 045102
[81]	Ellmer K 2012 Nat. Photo. 6 809
[82]	Janotti A and Van de Walle C G 2007 Phys. Rev. B 76 165202
[83]	Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A and Gnade B E 1996 J. Appl. Phys. 79 7983
[84]	Kim Y S and Park C H 2009 Phys. Rev. Lett. 102 086403
[85]	Li X N, Keyes B, Asher S, Zhang S B, Wei S H, Coutts T J, Limpijumnong S and Van de Walle C G 2005 Appl. Phys. Lett. 86 122107
[86]	McCluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
[87]	Janotti A and Van de Walle C G 2007 Phys. Rev. B 76 165202
[88]	Robertson J and Clark S J 2011 Phys. Rev. B 83 075205
[89]	Makino T, Segawa Y, Tsukazaki A, Ohtomo A and Kawasaki M 2005 Appl. Phys. Lett. 87 022101
[90]	Vanheusden K, Seager C H, Warren W L, Tallant D R and Voigt J A 1995 Appl. Phys. Lett. 68 15
[91]	Korsunska N O, Borkovska L V, Bulakh B M, Khomenkova Y L, Kushnirenko V I and Markevich I V 2003 J. Lum 102 733
[92]	Leiter F, Alves H, Pfisterer D, Romanov N G, Hofmann D M and Meyer B K 2003 Physica B 340 201
[93]	Leiter F H, Alves H R, Hofstaetter A, Hofmann D M and Meyer B K 2001 Phys. Stat. Sol.(b) 226 R4
[94]	Janotti A, Van de Walle C G 2006 J. Crys. Growth 287 58
[95]	Hofmann D M, Hofstaetter A, Leiter F, Zhou H, Henecker F, Meyer B K, Orlinskii S B, Schmidt J and Baranov P G 2002 Phys. Rev. Lett. 88 045504
[96]	Lyons J L, Steiauf D Janotti A and Van de Walle C G 2014 Phys. Rev. Appl. 2 064005
[97]	Park C H, Zhang S B and Wei S H 2002 Phys. Rev. B 66 073202
[98]	Kang H S, Ahn B D, Kim J H, Kim G H, Lim S H, Chang H W and Lee S Y2006 Appl. Phys. Lett. 88 202108
[99]	Lee E C and Chang K J 2004 Phys. Rev. B 70 115210
[100]	Lim J H, Kang C K, Kim K K, Park I K, Hwang D K and Park S J 2006 Adv. Mater. 18 2720
[101]	Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 1830
[102]	Yim K, Lee J, Lee D, Lee M, Cho E, Lee H S, Nahm H H and Han S 2017 Sci. Rep. 7 40907
[103]	Park R M, Troffer M, Rouleau C M, DePuydt J M and Haase M A 1990 Appl. Phys Lett. 57 2127
[104]	Liu W, Gu S L, Ye J D, Zhu S M, Liu S M, Zhou X, Zhang R, Shi Y, Zheng Y D, Hang Y and Zhang C L 2006 Appl. Phys. Lett. 88 092101
[105]	Barnes T M, Olson K and Wolden C A 2005 Appl. Phys. Lett. 86 112112
[106]	Rakhshani A E 2017 J. Alloy. Compound. 695 124
[107]	Tsukazaki A, KUBOTA M, Ohtomo A, Onuma T, Ohtani K, Ohno H, Chichibu S F and Kawasaki M 2004 Jpn J. Appl. Phys. 44 L643
[108]	Liu J S, Shan C X, Shen H, Li B H, Zhang Z Z, Liu L, Zhang L G and Shen D Z 2012 Appl. Phys. Lett. 101 011106
[109]	Li D H, Wang H Q, Zhou H, Li Y P, Huang Z, Zheng J C, Wang J O, Qian H J, Ibrahim K, Chen X H, Zhan H H, Zhou Y H and Kang J Y 2016 Chin. Phys. B 25 076105
[110]	Lyons J L, Janotti A and Van de Walle C G 2009 Appl. Phys. Lett. 95 252105
[111]	Tarun M C, Zafar I M and McCluskey M D 2011 AIP Adv. 1 022105
[112]	Liu L, Xu J L, Wang D D, Jiang M M, Wang S P, Li B H and Zhang Z Z 2012 Phys. Rev. Lett. 108 215501
[113]	Reynolds J G, Reynolds C L, Mohanta A, Muth J F, Rowe J E, Everitt H O and Aspnes D E 2013 Appl. Phys. Lett. 102 152114
[114]	Limpijumnong S, Zhang S B, Wei S H and Park C H 2004 Phys. Rev. Lett. 92 155504
[115]	Chadi D J 1991 Appl. Phys. Lett. 59 3589
[116]	Chen F G, Ye Z Z, Xu W Z, Zhao B H, Zhu L P and Lv J G 2005 J. Crys. Growth 281 458
[117]	Jeong T S, Yu J H, Mo H S, Kim T S, Youn C J and Hong K J 2013 J. Appl. Phys. 114 053504
[118]	Pandey S K, Pandey S K, Awasthi V, Gupta M, Deshpande U P and Mukherjee S 2013 Appl. Phys. Lett. 103 072109
[119]	Yim K, Lee J, Lee D, Lee M, Cho E, Lee H S, Nahm H H and Han S 2017 Sci. Rep. 7 40907
[120]	Ryu Y, Lee T S, Lubguban J A, White H W, Kim B J, Park Y S and Youn C J 2006 Appl. Phys. Lett. 88 241108
[121]	Ryu Y R, Lubguban J A and Lee T S, White H W, Jeong T S, Youn C J and Kim B J 2007 Appl. Phys. Lett. 90 131115
[122]	Liang J K, Su H L, Chuang P Y, Kuo C L, Huang S Y, Chan T S, Wu Y C and Huang J C A 2015 Appl. Phys. Lett. 106 212101
[123]	Janotti A and Van de Walle C G 2009 Rep. Prog. Phys. 72 126501
[124]	Yan Y F, Al-Jassim M M and Wei S H 2006 Appl. Phys. Lett. 89 181912
[125]	Ortega J J, Ortiz-Hernández A A, Berumen-Torres J, Escobar-Galindo R, Méndez-García V H and Araiza J J 2016 Mater. Lett. 181 12
[126]	Aimouch D E, Meskine S, Benaissa C Y, Zaoui A and Boukortt A 2017 Optik 130 1320
[127]	Ye Z, Wang T, Wu S, Ji X H and Zhang Q Y 2017 J. All. Comp. 690 189
[128]	Jaisutti R, Lee M, Kim J, Choi S, Ha T J, Kim J, Kim H, Park S K and Kim Y H 2017 ACS Appl. Mater. Interfaces 9 8796
[129]	Aimouch D E, Meskine S, Hayn R, Zaoui A and Boukortt A 2016 Mod. Phys. Lett. B 30 1650291
[130]	Bousmaha M, Bezzerrouk M A, Baghdad R, Chebbah K, Kharroubi B and Bouhafs B 2016 Acta Phys. Polon. A 129 1155
[131]	Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E and Cantwell G 2002 Appl. Phys. Lett. 81 622
[132]	Patino R, Campos M and Torres L A 2007 Inorg. Chem. 46 9332
[133]	"Lange's Handbook of Chemistry" Sixteenth Edition, Section 4:PROPERTIES OF ATOMS, RADICALS, AND BONDS, Edited by Speight J G 4.5 bond lengths and strengths, p 4.41
[134]	Ma J G, Liu Y C, Mu R, Zhang J Y, Lu Y M, Shen D Z and Fan X W 2004 J. Vac. Sci. Technol. B 22 94
[135]	Wang D, Liu Y C, Mu R, Zhang J Y, Lu Y M, Shen D Z and Fan X W 2004 J. Phys.:Condens. Matter 16 4635
[136]	Xiao Z Y, Liu Y C, Mu R, Zhao D X and Zhang J Y 2008 Appl. Phys. Lett. 92 052106
[137]	Xiao Z Y, Liu Y C, Zhang J Y, Zhao D X, Lu Y M, Shen D Z and Fan X W 2005 Semicon. Sci. Technol. 20 796
[138]	Barnes T M, Olson K and Wolden C A 2005 Appl. Phys. Lett. 86 112112
[139]	Butkuzi T V, Chelizde T G, Georgobiani A N, Jashiashvili D L, Khulordava T G and Tsekvava B E 1998 Phys. Rev. B 58 10692
[140]	Liu Z W, Yeo S W and Ong C K 2007 J. Mater. Res. 22 2668
[141]	Allenic A, Guo W, Chen Y B, Zhao G Y, Pan X Q, Che Y, Hu Z D and Liu B 2007 J. Mater. Res. 22 2339
[142]	Nakano Y, Morikawa T, Ohwaki T and Taga Y 2006 Appl. Phys. Lett. 88 172103
[143]	Jiang N K, Georgiev D G, Wen T and Jayatissa A H 2012 Thin Solid Films 520 1698
[144]	Zou C W, Chen R Q and Gao W 2009 Sol. Sta. Comm. 149 2085
[145]	Pakhshani A E, Bumajdad A, Kokaj J and Thomas S 2014 Kuwait J. Sci. 41 107
[146]	Erdogan N H, Kara K, Ozdamar H, Esen R and Kavak H 2013 Appl. Sur. Sci. 271 70
[147]	Jiang N K, Georgiev D G and Jayatissa A H 2013 Semicond. Sci. Technol. 28 025009
[148]	Kaminska E, Piotrowska A, Kossut J, Barcz A, Butkute R, Dobrowolski W, Dynowska E, Jakiela R, Przezdziecka E, Lukasiewicz R, Aleszkiewicz M, Wojnar P and Kowalczyk E 2005 Soli. Sta. Comm. 135 11
[149]	Wang C, Ji Z G, Liu K, Xiang Y and Ye Z Z 2003 J. Crys. Grow. 259 279
[150]	Jin Y P, Zhang B, Wang J Z and Shi L Q 2016 Chin. Phys. Lett. 33 058101
[151]	Wang L G and Zunger A 2003 Phys. Rev. Lett. 90 256401
[152]	Huda M N, Yan Y F and Al-Jassin M M 2012 J. Phys.:Cond. Mat. 24 415503
[153]	Tang X, Deng Y Z, Wagner D, Yu L and Lü H F 2012 Sol. Stat. Com. 152 1
[154]	Yamamoto T 2002 Thin Solid Films 420 100
[155]	Partin D E, Williams D J and O'Keeffe M 1997 J. Sol. Sta. Chem. 132 56
[156]	Zhang Q, Shen A D, Kuskovsky I L and Tamargo M C 2011 J. Appl. Phys. 110 034302
[157]	Kasai J I, Akimoto R, Hasama T, Ishikawa H, Fujisaki S, Tanaka S and Tsuji S 2011 Appl. Phys. Exp. 4 082102
[158]	Kim H S, Jeon S H, Park J S, Kim T S, Son K S, Seon J B, Seo S J, Kim S J, Lee E, Chung J G, Lee H, Han S, Ryu M, Lee S Y and Kim K 2013 Sci. Rep. 3 1459
[159]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[160]	Suda T and Kakishita K 2006 J. Appl. Phys. 99 076101
[161]	Hernandez-Alonso M D, Fresno F, Suarez S and Coronado J M 2009 Energy Environ. Sci. 2 1231
[162]	Yang L Y, Dong S Y, Sun J H, Feng J L, Wu Q H and Sun S P 2010 J. Hazard. Mater. 179 438
[163]	Kwiatkowski M, Chassagnon R, Heintz O, Geoffroy N, Skompska M and Bezverkhyy I 2017 Appl. Cataly. B:Environmental 204 200
[164]	Suzuki R, Nakagomi S and Kokubuna Y 2011 Appl. Phys. Lett. 98 131114
[165]	Higashiwaki M, Sasaki K, Kamimura T, Wong M H, Krishnamurthy D, Kuramata A, Masui T and Yamakoshi S 2013 Appl. Phys. Lett. 103 123511
[166]	Wang X, Shen S, Jin S Q, Yang J X, Li M R, Wang X L, Han H X and Li C 2013 Phys. Chem. Chem. Phys. 15 19380

[1]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2]	Atomic and electronic structures of p-type dopants in 4H-SiC Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳). Chin. Phys. B, 2021, 30(9): 096806.
[3]	First-principles investigation of the valley and electrical properties of carbon-doped α-graphyne-like BN sheet Bo Chen(陈波), Xiang-Qian Li(李向前), Lin Xue(薛林), Yan Han(韩燕), Zhi Yang(杨致), and Long-Long Zhang(张龙龙). Chin. Phys. B, 2021, 30(5): 057101.
[4]	Anti-oxidation characteristics of Cr-coating on surface of Ti-45Al-8.5Nb alloy by plasma surface metallurgy technique Bing Zhou(周兵), Ya-Rong Wang(王亚榕), Ke Zheng(郑可), Yong Ma(马永), Yong-Sheng Wang(王永胜), Sheng-Wang Yu(于盛旺), and Yu-Cheng Wu(吴玉程). Chin. Phys. B, 2020, 29(12): 126101.
[5]	Synthesis and characterization of β-Ga₂O₃@GaN nanowires Shuang Wang(王爽), Yue-Wen Li(李悦文), Xiang-Qian Xiu(修向前), Li-Ying Zhang(张丽颖), Xue-Mei Hua(华雪梅), Zi-Li Xie(谢自力), Tao Tao(陶涛), Bin Liu(刘斌), Peng Chen(陈鹏), Rong Zhang(张荣), You-Dou Zheng(郑有炓). Chin. Phys. B, 2019, 28(2): 028104.
[6]	Retarded thermal oxidation of strained Si substrate Sun Jia-Bao (孙家宝), Tang Xiao-Yu (唐晓雨), Yang Zhou-Wei (杨周伟), Shi Yi (施毅), Zhao Yi (赵毅). Chin. Phys. B, 2014, 23(6): 066103.
[7]	Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge Han Le (韩乐), Wang Sheng-Kai (王盛凯), Zhang Xiong (张雄), Xue Bai-Qing (薛百清), Wu Wang-Ran (吴汪然), Zhao Yi (赵毅), Liu Hong-Gang (刘洪刚). Chin. Phys. B, 2014, 23(4): 046804.
[8]	Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_0.18Al_0.82N/GaN heterostructures Lin Fang (林芳), Shen Bo (沈波), Lu Li-Wu (卢励吾), Xu Fu-Jun (许福军), Liu Xin-Yu (刘新宇), Wei Ke (魏珂). Chin. Phys. B, 2014, 23(3): 037303.
[9]	Compositional and structural evolution of the titanium dioxide formation by thermal oxidation Su Wei-Feng(苏卫锋), Gnaser Hubert , Fan Yong-Liang(樊永良), Jiang Zui-Min(蒋最敏), and Le Yong-Kang(乐永康). Chin. Phys. B, 2008, 17(8): 3003-3007.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn3N2 precursors

Cite this article:

Online attention

The p-type ZnO thin films obtained by a reversed substitution doping method of thermal oxidation of Zn₃N₂ precursors