Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

doi:10.1088/1674-1056/26/10/108503

Abstract The impact of negative bias temperature instability (NBTI) can be ascribed to three mutually uncorrelated factors, including hole trapping by pre-existing traps (△ V_HT) in gate insulator, generated traps (△ V_OT) in bulk insulator, and interface trap generation (△ V_IT). In this paper, we have experimentally investigated the NBTI characteristic for a 40-nm complementary metal-oxide semiconductor (CMOS) process. The power-law time dependence, temperature activation, and field acceleration have also been explored based on the physical reaction-diffusion model. Moreover, the end-of-life of stressed device dependent on the variation of stress field and temperature have been evaluated. With the consideration of locking effect, the recovery characteristics have been modelled and discussed.

Keywords: negative bias temperature instability (NBTI) reaction diffusion (RD) interface trap H₂ locking effect

Received: 04 June 2017
Revised: 26 June 2017
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	77.55.df	(For silicon electronics)
	66.30.J-	(Diffusion of impurities ?)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574056 and 61204038), the Natural Science Funds of Shanghai, China (Grant No. 14ZR1412000), the Fund from the Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800), and Shanghai Sailing Program (Grant No. 17YF1404700).

Corresponding Authors: Xiao-Jin Li, Xiao-Jin Li
E-mail: xjli@ee.ecnu.edu.cn;ybsun@ee.ecnu.edu.cn

Cite this article:

Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚) Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models 2017 Chin. Phys. B 26 108503

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Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

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