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Chin. Phys. B, 2015, Vol. 24(11): 117701    DOI: 10.1088/1674-1056/24/11/117701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

C. M. Bedoya-Hincapiéa b, H. H. Ortiz-Álvareza c, E. Restrepo-Parraa, J. J. Olaya-Flórezd, J. E. Alfonsoe
a PCM Computational Applications, Universidad Nacional de Colombia, sede Manizales, Manizales-Colombia;
b Univesidad Santo Tomás, Bogotá-Colombia;
c Universidad de Caldas, Manizales-Colombia;
d AFIS Análisis de Fallas, Integridad y Superficies, Universidad Nacional de Colombia, sede Bogotá, Bogotá-Colombia;
e Grupo de Ciencia de Materiales y superficies, Departamento de Física, Universidad Nacional de Colombia, sede Bogotá, Bogotá-Colombia
Abstract  The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response.
Keywords:  ferroelectrics      bismuth titanate      hysteresis loop      dipolar defects  
Received:  03 May 2015      Revised:  21 July 2015      Accepted manuscript online: 
PACS:  77.55.fp (Other ferroelectric films)  
  77.80.Dj (Domain structure; hysteresis)  
  61.72.jd (Vacancies)  
Fund: Project sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-“Crecimiento y caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering” and Project 12920-“Desarrollo teórico-experimental de nanoestructuras basadas en Bismuto y materiales similares” and “Bisnano Project.”
Corresponding Authors:  C. M. Bedoya-Hincapié     E-mail:  cmbedoyahi@unal.edu.co

Cite this article: 

C. M. Bedoya-Hincapié, H. H. Ortiz-Álvarez, E. Restrepo-Parra, J. J. Olaya-Flórez, J. E. Alfonso Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study 2015 Chin. Phys. B 24 117701

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