Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

doi:10.1088/1674-1056/24/10/107303

Abstract The Pt/Si/Ta/Ti multilayer metal contacts on 4H-SiC are annealed in Ar atmosphere at 600 ℃-1100 ℃ by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 ℃ in air. The contact's properties are determined by current-voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.

Keywords: Ohmic contact annealing temperature thermal stability interface morphology

Received: 07 March 2015
Revised: 24 April 2015
Accepted manuscript online:

PACS:	73.40.Cg	(Contact resistance, contact potential)
	68.55.-a	(Thin film structure and morphology)

Fund: Project supported by the Special Prophase Project on the National Basic Research Program of China (Grant No. 2012CB326402), the National Natural Science Found of China (Grant No. 61404085), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

Corresponding Authors: Chen Zhi-Zhan
E-mail: chenwbgs@126.com

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Cheng Yue (程越), Zhao Gao-Jie (赵高杰), Liu Yi-Hong (刘益宏), Sun Yu-Jun (孙玉俊), Wang Tao (王涛), Chen Zhi-Zhan (陈之战) Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts 2015 Chin. Phys. B 24 107303

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Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

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