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Chin. Phys. B, 2016, Vol. 25(6): 067306    DOI: 10.1088/1674-1056/25/6/067306

Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜)
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

In this work, we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of GaAs pseudomorphic high electron mobility transistors (pHEMTs) and Si complementary metal-oxide semiconductor (CMOS) on the same Silicon substrate. GaAs pHEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique, and the best alignment accuracy of 5 μm is obtained. As a circuit example, a wide band GaAs digital controlled switch is fabricated, which features the technologies of a digital control circuit in Si CMOS and a switch circuit in GaAs pHEMT, 15% smaller than the area of normal GaAs and Si CMOS circuits.

Keywords:  Si CMOS      GaAs pHEMT      heterogeneous integration      benzocyclobutene  
Received:  22 November 2015      Revised:  21 February 2016      Accepted manuscript online: 
PACS:  73.61.Ey (III-V semiconductors)  
  85.30.Tv (Field effect devices)  
  61.50.Lt (Crystal binding; cohesive energy)  
Corresponding Authors:  Li-Shu Wu     E-mail:

Cite this article: 

Li-Shu Wu(吴立枢), Yan Zhao(赵岩), Hong-Chang Shen(沈宏昌) You-Tao Zhang(张有涛), Tang-Sheng Chen(陈堂胜) Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip 2016 Chin. Phys. B 25 067306

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