CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers |
Jiang Liang-Bao (姜良宝), Liu Yu (刘宇), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军) |
Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract Ferromagnetism is investigated in high-quality Cu-doped AlN single crystal whiskers. The whiskers exhibit room-temperature ferromagnetism with a magnetic moment close to the results from first-principles calculations. High crystallinity and low Cu concentrations are found to be indispensable for high magnetic moments. The difference between the experimental and theoretical moment values is explored in terms of the influence of nitrogen vacancies. The calculated results demonstrate that nitrogen vacancies can reduce the magnetic moments of Cu atom.
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Received: 20 June 2014
Revised: 20 October 2014
Accepted manuscript online:
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PACS:
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75.50.-y
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(Studies of specific magnetic materials)
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71.55.-i
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(Impurity and defect levels)
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61.72.uj
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(III-V and II-VI semiconductors)
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71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB932901), the National Natural Science Foundation of China (Grant Nos. 51372267, 51210105026, and 51172270), the Funds from the Chinese Academy of Sciences, the International Centre for Diffraction Data, USA (2013 Ludo Frevel Crystallography Scholarship Award), and the Funds from the Ministry of Education of China (2012 Academic Scholarship Award for Doctoral Candidates). |
Corresponding Authors:
Wang Wen-Jun
E-mail: wjwang@aphy.iphy.ac.cn
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Cite this article:
Jiang Liang-Bao (姜良宝), Liu Yu (刘宇), Zuo Si-Bin (左思斌), Wang Wen-Jun (王文军) Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers 2015 Chin. Phys. B 24 027503
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