PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias |
Gao Fei (高飞), Zhang Yu-Ru (张钰如), Zhao Shu-Xia (赵书霞), Li Xue-Chun (李雪春), Wang You-Nian (王友年) |
School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China |
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Abstract The inflexion point of electron density and effective electron temperature curves versus radio-frequency (RF) bias voltage is observed in the H mode of inductively coupled plasmas (ICPs). The electron energy probability function (EEPF) evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is: bias-induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.
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Received: 08 May 2014
Revised: 30 May 2014
Accepted manuscript online:
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PACS:
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52.70.-m
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(Plasma diagnostic techniques and instrumentation)
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52.80.Pi
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(High-frequency and RF discharges)
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52.50.Qt
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(Plasma heating by radio-frequency fields; ICR, ICP, helicons)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11075029, 11175034, and 11205025) and the Fundamental Research Funds for Central Universities, China (Grant No. DUT12RC(3)14). |
Corresponding Authors:
Wang You-Nian
E-mail: ynwang@dlut.edu.cn
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Cite this article:
Gao Fei (高飞), Zhang Yu-Ru (张钰如), Zhao Shu-Xia (赵书霞), Li Xue-Chun (李雪春), Wang You-Nian (王友年) Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias 2014 Chin. Phys. B 23 115202
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