Introduction of F4-TCNQ/MoO3 layers for thermoelectric devices based on pentacene

doi:10.1088/1674-1056/23/9/098502

Abstract We introduced a dual electron accepting layer composed of tetrafluoro-tetracyanoquinodimethane (F₄-TCNQ) and MoO₃ for thermoelectric devices based on a pentacene layer. We found that the power factor is enhanced by placing an F₄-TCNQ layer directly in contact with the pentacene layer and it is also enhanced by placing a MoO₃ layer between the F₄-TCNQ layer and the Au electrode. By examining the contact resistance using a field effect transistor and a hole-only diode, we confirmed that the hole injection is improved due to the reduction of contact resistance at the interface between the MoO₃ layer and the Au electrode.

Keywords: thermoelectrics pentacene MoO₃ contact resistance

Received: 18 February 2014
Revised: 25 April 2014
Accepted manuscript online:

PACS:	85.50.Fi
	84.60.Rb	(Thermoelectric, electrogasdynamic and other direct energy conversion)
	73.50.Lw	(Thermoelectric effects)

Fund: Project supported by the New Energy and Industrial Technology Development Organization (NEDO), the Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST), and the International Institute for Carbon Neutral Energy Research (WPI-I2CNER) sponsored by MEXT.

Corresponding Authors: Chihaya Adachi
E-mail: adachi@cstf.kyushu-u.ac.jp

Cite this article:

Wu Shuang-Hong (吴双红), Ryosuke Nakamichi, Masatsugu Taneda, Zhang Qi-Sheng (张其胜), Chihaya Adachi Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene 2014 Chin. Phys. B 23 098502

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Introduction of F₄-TCNQ/MoO₃ layers for thermoelectric devices based on pentacene