CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Mn substitution on thermoelectric properties of CuIn1-xMnxTe2 |
Pengfei Luo(罗鹏飞)1,2, Li You(游理)3, Jiong Yang(杨炯)2, Juanjuan Xing(邢娟娟)3, Jiye Zhang(张继业)3, Chenyang Wang(王晨阳)3, Xinluo Zhao(赵新洛)1, Jun Luo(骆军)3, Wenqing Zhang(张文清)2,3 |
1 Department of Physics, Institute of Low-Dimensional Carbons and Device Physics, Shanghai University, Shanghai 200444, China;
2 Materials Genome Institute, Shanghai University, Shanghai 200444, China;
3 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China |
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Abstract CuIn1-xMnxTe2 samples have been synthesized by a melt-annealing method. The x-ray powder diffraction (XRD) analysis shows that the CuIn1-xMnxTe2 samples crystallize in the chalcopyrite phase. Mn doping can effectively optimize the electrical properties and accordingly improve the power factor. The room temperature electrical conductivity of doped CuInTe2 increases by several orders of magnitude due to substituting In with Mn. In addition, a large reduction in thermal conductivity is achieved through the enhanced phonon scattering via Mn-related point defects and precipitates. Therefore, an enhanced average ZT value up to 0.34 is achieved for sample CuIn0.925Mn0.075Te2, which is 41% higher than that of the pristine CuInTe2.
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Received: 08 May 2017
Revised: 10 June 2017
Accepted manuscript online:
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PACS:
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72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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74.25.fg
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(Thermoelectric effects)
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Fund: Project supported by the National Natural Science Foundation of China (Nos. 51632005 and 51371194) and National Basic Research Program of China (Grant No. 2013CB632500). |
Corresponding Authors:
Jun Luo, Wenqing Zhang
E-mail: junluo@shu.edu.cn;wqzhang@t.shu.edu.cn
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Cite this article:
Pengfei Luo(罗鹏飞), Li You(游理), Jiong Yang(杨炯), Juanjuan Xing(邢娟娟), Jiye Zhang(张继业), Chenyang Wang(王晨阳), Xinluo Zhao(赵新洛), Jun Luo(骆军), Wenqing Zhang(张文清) Effects of Mn substitution on thermoelectric properties of CuIn1-xMnxTe2 2017 Chin. Phys. B 26 097201
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