Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions
Li Xing-Ji (李兴冀)a, Liu Chao-Ming (刘超铭)a, Sun Zhong-Liang (孙中亮)a, Xiao Li-Yi (肖立伊)b, He Shi-Yu (何世禹)a
a Department of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001, China; b Department of Astronautics, Harbin Institute of Technology, Harbin 150001, China
Abstract The radiation effects on several properties (reference voltage, digital output logic voltage, and supply current) of dual 8-bit analog-to-digital (A/D) converters (AD9058) under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity (ELDRS) under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11205038) and the China Postdoctoral Science Foundation (Grant No. 2012M510951).
Corresponding Authors:
Li Xing-Ji
E-mail: lxj0218@hit.edu.cn
Cite this article:
Li Xing-Ji (李兴冀), Liu Chao-Ming (刘超铭), Sun Zhong-Liang (孙中亮), Xiao Li-Yi (肖立伊), He Shi-Yu (何世禹) Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions 2013 Chin. Phys. B 22 098501
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