Thermal stability and electrical properties of copper nitride with In or Ti
Du Yun (杜允)a b, Gao Lei (高磊)b, Li Chao-Rong (李超荣)c, Ji Ai-Ling (纪爱玲)b
a Information Engineering School, Hangzhou Dianzi University, Hangzhou 310018, China; b State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; c School of Sciences, Zhejiang Sci-Tech University, Hangzhou 310018, China
Abstract Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N, a material that decomposes below 300 ℃, and thus promises many interesting applications in directwriting. The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure, surface morphology, and temperature dependence of electrical resistivity. More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice. A small amount of In or Ti can improve the crystallinity, and consequently the surface morphology. While the decomposition temperature is rarely influenced by In, the Ti-doped sample, Cu59.31Ti2.64N38.05, shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks, even after annealing at 500 ℃. Both In and Ti reduce the bandgap of the original Cu3N phase, resulting in a smaller electrical resistivity at room temperature. The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K. These results can be useful in improving the applicability of copper-nitride-based thin films.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51172272, 10904165, and 11290161) and the National Basic Research Program of China (Grant No. 2012CB933002).
Corresponding Authors:
Ji Ai-Ling
E-mail: alji@iphy.ac.cn
Cite this article:
Du Yun (杜允), Gao Lei (高磊), Li Chao-Rong (李超荣), Ji Ai-Ling (纪爱玲) Thermal stability and electrical properties of copper nitride with In or Ti 2013 Chin. Phys. B 22 066804
[1]
Asano M, Umeda K and Tasaki A 1990 Jpn. J. Appl. Phys. 29 1985
[2]
Maruyama T and Morishita T 1996 Appl. Phys. Lett. 69 890
[3]
Borsa D M, Grachev S, Presura C and Boerma D O 2002 Appl. Phys.Lett. 80 1823
[4]
Nosaka T, Yoshitake M, Okamoto A, Ogawa S and Nakayama Y 2001Appl. Surf. Sci. 169 358
[5]
Navio C, Capitan M J, Alvarez J, Yndurain F and Miranda R 2007Phys. Rev. B 76 085105
[6]
Maya L 1993 J. Vac. Sci. Technol. A 11 604
[7]
Cremer R, Witthaut M, Neuschutz D, Trappe C, Laurenzis M, WinkleO and Kurz H 2000 Mikro. Acta 133 299
[8]
Maruyama T and Morishita T 1996 Appl. Phys. Lett. 69 890
[9]
Nosaka T, Yoshitake M, Okamoto A, Ogawa S and Nakayama Y 2001Appl. Surf. Sci. 169 358
[10]
Liu Z Q, Wang W J, Wang T M, Chao S and Zheng S K 1998 ThinSolid Films 325 55
[11]
Du Y, Huang R, Ma L B, Ji A L, Song R and Cao Z X, 2007 J. Mater.Res. 22 3052
[12]
Ji A L, Huang R, Du Y, Li C R and Cao Z X 2006 J. Crystal Growth295 79
[13]
Zhou Z F, Qin F W, Zang H R, Zhang D, Chen W J, Zhi A B, Liu X L,Yu B and Jiang X 2011 Chin. Phys. Lett. 28 028102
[14]
Niu E W, Fan S H, Li L, Lu G H, Feng W R, Zhang G L and Yang S Z2006 Chin. Phys. Lett. 23 1533
[15]
Juza R, Hahn H and Anorg Z 1938 Allg. Chem. 239 282
[16]
Fischer D and Jansen M 2002 Angew. Chem. Int. Ed. 41 1755
[17]
Vajenine G V 2007 Inorg. Chem. 46 5146
[18]
Moreno-Armenta M G, Lopez W and Takeuchi N 2007 Solid State Sci.9 166
[19]
Zachwiecha U and Jacobs H 1991 J. Less-Common Met. 170 185
[20]
Blucher J and Bang K 1989 Mater. Sci. Eng. A 117 L1
[21]
Hayashi Y, Ishikawa T and Shimokawa D 2002 J. Alloys Compd. 330-332 348
[22]
Pierson J F and Horwat D 2008 Scr. Mater. 58 568
[23]
Gao L, Ji A L, Zhang W B and Cao Z X 2011 J. Crystal Growth 321157
[24]
Ji A L, Du Y, Gao L and Cao Z X 2010 Phys. Status Solidi A 207 2769
[25]
Gulo F, Simon A, Kohler J and Kremer R K 2004 Agew. Chem. Int. Ed.43 2032
[26]
Ji A L, Li C R and Cao Z X 2006 Appl. Phys. Lett. 89 252120
[27]
Ji A L, Li C R, Du Y, Ma L B, Song R and Cao Z X 2005 Nanotech. 162092
[28]
Du Y, Ji A L, Ma L B, Wang Y Q and Cao Z X 2005 J. Crystal Growth280 480
[29]
Ji A L, Du Y, Li C R and Cao Z X 2007 J. Vac. Sci. Technol. B 25 208
[1]
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
