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Chin. Phys. B, 2013, Vol. 22(6): 067503    DOI: 10.1088/1674-1056/22/6/067503
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

Ran Cong-Jun (冉从军), Yang Hai-Ling (杨海龄), Wang Yan-Kai (王延恺), Hassan Farooq M, Zhou Li-Gong (周丽宫), Xu Xiao-Guang (徐晓光), Jiang Yong (姜勇)
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Abstract  Zn0.99Cu0.01O films were studied both experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of ferromagnetic (FM) properties. The structural, magnetic, and optical properties were studied. It was found that all the samples possess a typical wurtzite structure, and the films exhibit room temperature ferromagnetism. The sample deposited at 600 ℃ and oxygen pressure of 10 Pa shows a large saturation magnetization of 0.83 μB/Cu. The enhanced FM in the (Cu, Li)-codoped ZnO is attributable to the existence of Zn vacancies (VZn), as shown by first-principles calculations. The photoluminescence analysis demonstrates the existence of VZn in both Zn0.99Cu0.01O and (Cu, Li)-codoped ZnO thin films, which plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations.
Keywords:  dilute magnetic semiconductor      Cu-doped ZnO      pulsed laser deposition      first-principles  
Received:  10 December 2012      Revised:  16 January 2013      Accepted manuscript online: 
PACS:  75.50.Pp (Magnetic semiconductors)  
  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
Fund: Project partially supported by the National Basic Research Program of China (Grant No. 2012CB932702), the National High Technology Research and Development Program of China (Grant No. 2013AA031601), the National Natural Science Foundation of China (Grant Nos. 50831002, 51071022, 11174031, and 51271020), PCSIRT, Beijing Nova Program (Grant No. 2011031), and the Fundamental Research Funds for the Central Universities.
Corresponding Authors:  Xu Xiao-Guang     E-mail:  xgxu@ustb.edu.cn

Cite this article: 

Ran Cong-Jun (冉从军), Yang Hai-Ling (杨海龄), Wang Yan-Kai (王延恺), Hassan Farooq M, Zhou Li-Gong (周丽宫), Xu Xiao-Guang (徐晓光), Jiang Yong (姜勇) The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping 2013 Chin. Phys. B 22 067503

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