Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm1-xCexVO3
Hu Xin-Bo (胡新波)a, Hu Ling (胡令)a, Luo Xuan (罗轩)a, Zhao Bang-Chuan (赵邦传)a, Sun Yu-Ping (孙玉平)a b
a Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China; b High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
Abstract The effects of Ce-doping on the phase transition of the orbital/spin ordering (OO/SO) are studied through the structural, magnetic, and electrical transport measurements of perovskite vanadate Sm1-xCexVO3. The measurements of structure show that the cell volume decreases as x ≤ 0.05, and then increases as Ce-doping level increases further. The OO state exists but is suppressed progressively in the sample with x ≤ 0.2 and disappears as x>0.2. The temperature at which the C-type SO transition is present increases monotonically with Ce-doping level increasing. The temperature dependence of resistivity for each of all samples shows a semiconducting transport behavior and the transport can be well described by the thermal activation model. The activation energy first decreases as x ≤ 0.2, and then increases for further doping. The obtained results are discussed in terms of the mixed-valent state of the doped-Ce ions.
(Magnetization curves, hysteresis, Barkhausen and related effects)
Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00111) and the National Natural Science Foundation of China (Grant Nos. 10974205, 11104273, and 11004193).
Corresponding Authors:
Hu Ling, Sun Yu-Ping
E-mail: huling@issp.ac.cn; ypsun@issp.ac.cn
Cite this article:
Hu Xin-Bo (胡新波), Hu Ling (胡令), Luo Xuan (罗轩), Zhao Bang-Chuan (赵邦传), Sun Yu-Ping (孙玉平) Different effects of Ce-doping on orbital and spin ordering in perovskite vanadate Sm1-xCexVO3 2013 Chin. Phys. B 22 047501
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