Dislocation-mediated creep process in nanocrystalline Cu

doi:10.1088/1674-1056/22/3/037303

Abstract Nanocrystalline Cu with average grain sizes ranging from ～24.4 to 131.3 nm were prepared by electric brush-plating technique. Nanoindentation tests were performed within a wide strain rate range, and the creep process of nanocrystalline Cu during holding period and its relationship to dislocation and twin structures were examined. It was demonstrated that creep strain and creep strain rate are considerably significant for smaller grain size and higher loading strain rate, and are far higher than those predicted by the models of Cobble creep and grain boundary sliding. The analysis based on the calculations and experiments reveals that the significant creep deformation arises from the rapid absorption of high density dislocations stored in loading regime. Our experiments imply that stored dislocations during loading are highly unstable and dislocation activity can proceed and lead to significant post-loading plasticity.

Keywords: nanocrystalline creep dislocation nanoindentation

Received: 06 November 2012
Revised: 17 December 2012
Accepted manuscript online:

PACS:	73.63.Bd	(Nanocrystalline materials)
	62.20.Hg	(Creep)
	61.72.Lk	(Linear defects: dislocations, disclinations)
	62.90.+k	(Other topics in mechanical and acoustical properties of condensed matter)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 50771049 and 50871046) and the National Basic Research Program of China (Grant No. 2010CB 631001).

Corresponding Authors: Jiang Zhong-Hao
E-mail: jzh@jlu.edu.cn

Cite this article:

Mu Jun-Wei (穆君伟), Sun Shi-Cheng (孙世成), Jiang Zhong-Hao (江忠浩), Lian Jian-She (连建设), Jiang Qing (蒋青) Dislocation-mediated creep process in nanocrystalline Cu 2013 Chin. Phys. B 22 037303

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Dislocation-mediated creep process in nanocrystalline Cu

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